PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE
    1.
    发明申请
    PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE 有权
    图案形成方法,通过该方法形成的电阻图案,使用其制造电子器件的方法和电子器件

    公开(公告)号:US20150253673A1

    公开(公告)日:2015-09-10

    申请号:US14719830

    申请日:2015-05-22

    Abstract: There is provided a pattern forming method including (1) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) capable of increasing the polarity by the action of an acid so that a solubility thereof in a developer containing an organic solvent is decreased, (2) exposing the film, (3) developing the film by a developer including an organic solvent to form a negative pattern having a space part obtained by removing a part of the film and a residual film part which is not removed by the developing, (4) forming a resist film for reversing a pattern, on the negative pattern, so as to be embedded in the space part in the negative pattern, and (5) reversing the negative pattern into a positive pattern by removing the residual film part in the negative pattern by using an alkaline wet etching liquid.

    Abstract translation: 提供了一种图案形成方法,其包括(1)通过含有能够通过酸的作用增加极性的树脂(A)的光化射线敏感性或辐射敏感性树脂组合物形成膜,使得其在 包含有机溶剂的显影剂减少,(2)使膜曝光,(3)通过包含有机溶剂的显影剂显影膜,以形成具有通过除去一部分膜而获得的空间部分的负图案和残留膜部分 (4)在负图案上形成用于反转图案的抗蚀剂膜,以便嵌入在负图案的空间部分中,并且(5)将负图案反转为正的图案 通过使用碱性湿蚀刻液除去负图案中的残留膜部分的图案。

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