METHOD OF MANUFACTURING SEMICONDUCTOR QUANTUM DOT AND SEMICONDUCTOR QUANTUM DOT

    公开(公告)号:US20190027562A1

    公开(公告)日:2019-01-24

    申请号:US16137504

    申请日:2018-09-20

    Abstract: There is provided a method of manufacturing a semiconductor quantum dot including the following steps (A1) and (B1):a step (A1) of causing a nanoparticle including a specific compound semiconductor and a salt of a specific metal a1 to react with each other to introduce the metal a1 into a surface layer of the nanoparticle; anda step (B1) of causing the nanoparticle in which the metal a1 is introduced into the surface layer and a salt of a specific metal b1 to react with each other to introduce the metal b1 into the surface layer of the nanoparticle.There is provided a semiconductor quantum dot having a structure in which a specific metal a1 and/or a specific metal b1 is introduced into a surface layer of a nanoparticle including a specific compound semiconductor.

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