公开(公告)号：US20030189396A1

公开(公告)日：2003-10-09

申请号：US10405703

申请日：2003-04-03

Applicant: FUTABA CORPORATION

Inventor： Takahiro Niiyama ,  Mitsuru Tanaka ,  Yuji Obara

IPC: H01J001/02

CPC classification number: H01J1/304 ,  H01J3/021 ,  H01J9/025 ,  H01J29/04 ,  H01J2329/00

Abstract: A field emission element includes a substrate, a cathode conductor disposed on the substrate, an insulating layer structure on the cathode conductor that has a first insulating layer on the cathode conductor and a second insulating layer on the first insulating layer, a gate disposed on the second insulating layer, a gate hole provided through the gate and the insulating layer structure to expose a portion of the cathode conductor therethrough, and an emitter on the exposed portion of the cathode conductor in the gate hole. The first insulating layer is covered by the second insulating layer at a side surface of the gate hole and a dielectric constant of the first insulating layer is different from that of the second insulating layer.

Abstract translation: 场发射元件包括衬底，设置在衬底上的阴极导体，阴极导体上的绝缘层结构，阴极导体上具有第一绝缘层，在第一绝缘层上具有第二绝缘层，栅极设置在阴极导体上 第二绝缘层，通过栅极设置的栅极孔和绝缘层结构，以暴露阴极导体的一部分，以及位于栅极孔中的阴极导体的暴露部分上的发射极。 第一绝缘层在栅极孔的侧面由第二绝缘层覆盖，第一绝缘层的介电常数与第二绝缘层的介电常数不同。