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    Compositions and Methods for Forming a Semiconducting and/or Silicon-Containing Film, and Structures Formed Therefrom
    1.
    发明申请
    Compositions and Methods for Forming a Semiconducting and/or Silicon-Containing Film, and Structures Formed Therefrom 审中-公开
    用于形成半导体和/或含硅膜的组合物和方法，以及由此形成的结构

    公开(公告)号：US20110104877A1

    公开(公告)日：2011-05-05

    申请号：US12984535

    申请日：2011-01-04

    申请人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    发明人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    IPC分类号： H01L21/20 ,  B82Y99/00

    CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

    摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

    摘要翻译： 用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。 组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。 油墨通常包括组合物和其中组合物可溶的溶剂。 该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。 在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化 涂覆的薄膜形成半导体薄膜。 半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。 相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺， 与传统的光刻工艺。

    Compositions and Methods for Forming a Semiconducting and/or Silicon-Containing Film, and Structures Formed Therefrom
    2.
    发明申请
    Compositions and Methods for Forming a Semiconducting and/or Silicon-Containing Film, and Structures Formed Therefrom 有权
    用于形成半导体和/或含硅膜的组合物和方法，以及由此形成的结构

    公开(公告)号：US20090053536A1

    公开(公告)日：2009-02-26

    申请号：US12261002

    申请日：2008-10-29

    申请人： Klaus KUNZE et al. ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    发明人： Klaus KUNZE et al. ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    IPC分类号： B32B13/04 ,  H01L29/06 ,  C04B41/50 ,  H01L21/31

    CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

    摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

    摘要翻译： 用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。 组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。 油墨通常包括组合物和其中组合物可溶的溶剂。 该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。 在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化 涂覆的薄膜形成半导体薄膜。 半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。 相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺， 与传统的光刻工艺。

    Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
    6.
    发明申请
    Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom 有权
    用于形成半导体和/或含硅膜的组合物和方法，以及由其形成的结构

    公开(公告)号：US20050008880A1

    公开(公告)日：2005-01-13

    申请号：US10616147

    申请日：2003-07-08

    申请人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    发明人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    IPC分类号： B32B9/04 ,  B32B13/04 ,  C09D11/00 ,  H01L21/20 ,  H01L21/208 ,  H01L21/336 ,  H01L21/44

    CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

    摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

    摘要翻译： 用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。 组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。 油墨通常包括组合物和其中组合物可溶的溶剂。 该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。 在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化 涂覆的薄膜形成半导体薄膜。 半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。 相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺， 与传统的光刻工艺。

    Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
    7.
    发明授权
    Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom 有权
    用于形成半导体和/或含硅膜的组合物和方法，以及由其形成的结构

    公开(公告)号：US07553545B2

    公开(公告)日：2009-06-30

    申请号：US11373696

    申请日：2006-03-10

    申请人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    发明人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    IPC分类号： B32B9/04 ,  B32B13/04 ,  H01L21/00 ,  H01L21/20 ,  H01L21/84

    CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

    摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

    摘要翻译： 用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。 组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。 油墨通常包括组合物和其中组合物可溶的溶剂。 该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。 在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化 涂覆的薄膜形成半导体薄膜。 半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。 相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺， 与传统的光刻工艺。

    Methods for forming passivated semiconductor nanoparticles
    9.
    发明授权
    Methods for forming passivated semiconductor nanoparticles 有权
    形成钝化半导体纳米颗粒的方法

    公开(公告)号：US07767261B2

    公开(公告)日：2010-08-03

    申请号：US12261002

    申请日：2008-10-29

    申请人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    发明人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    IPC分类号： B05D5/00

    CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

    摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

    摘要翻译： 用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。 组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。 油墨通常包括组合物和其中组合物可溶的溶剂。 该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。 在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化 涂覆的薄膜形成半导体薄膜。 半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。 相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺， 与传统的光刻工艺。

    Compositions for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
    10.
    发明授权
    Compositions for forming a semiconducting and/or silicon-containing film, and structures formed therefrom 有权
    用于形成半导体和/或含硅膜的组合物及由其形成的结构

    公开(公告)号：US07422708B2

    公开(公告)日：2008-09-09

    申请号：US11373460

    申请日：2006-03-10

    申请人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    发明人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    IPC分类号： H01B1/02 ,  H01B1/20

    CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

    摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

    摘要翻译： 用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。 组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。 油墨通常包括组合物和其中组合物可溶的溶剂。 该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。 在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化 涂覆的薄膜形成半导体薄膜。 半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。 相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺， 与传统的光刻工艺。