公开(公告)号：US4597165A

公开(公告)日：1986-07-01

申请号：US555671

申请日：1983-11-28

申请人： Federico Capasso ,  Marlin W. Focht ,  Albert T. Macrander ,  Bertram Schwartz

发明人： Federico Capasso ,  Marlin W. Focht ,  Albert T. Macrander ,  Bertram Schwartz

IPC分类号： H01L21/265 ,  H01L21/266 ,  H01L21/324 ,  H01L21/74 ,  H01L21/76 ,  H01L21/762 ,  H01L21/822 ,  H01L21/8252 ,  H01L27/04 ,  H01L27/15 ,  H01S3/18 ,  H01L21/208

CPC分类号： H01L21/3245 ,  H01L21/2654 ,  H01L21/266 ,  H01L21/743 ,  H01L21/7605 ,  H01L21/8252 ,  Y10S148/084

摘要： The property of materials in the InP system, whereby helium ion or deuteron bombarded p-type material becomes highly resistive but n-type material remains relatively conductive, is utilized to fabricate integrated circuits which include buried semiconductor interconnections or bus bars between devices.

摘要翻译： InP系统中的材料的性质，由此氦离子或氘核轰击的p型材料变得高度电阻，但是n型材料保持相对导电性，用于制造集成电路，其包括在器件之间的掩埋半导体互连或母线。

公开(公告)号：USH147H

公开(公告)日：1986-11-04

申请号：US499775

申请日：1983-05-31

申请人： Leonard C. Feldman ,  Marlin W. Focht ,  Albert T. Macrander ,  Bertram Schwartz

发明人： Leonard C. Feldman ,  Marlin W. Focht ,  Albert T. Macrander ,  Bertram Schwartz

IPC分类号： H01L21/265 ,  H01L21/76 ,  H01L31/18 ,  H01L33/00 ,  H01S5/20

CPC分类号： H01L21/2654 ,  H01L21/7605 ,  H01L31/184 ,  H01L33/0062 ,  H01S5/20 ,  H01S5/2059 ,  Y02E10/544

摘要： Helium-3 and helium-4 bombardment of InP over a fluence range of 10.sup.11 to 10.sup.16 ions/cm.sup.2 reproducibly forms highly resistive regions in both p-type and n-type single crystal material. Average peak resistivities are about 10.sup.9 ohm-cm for p-type InP and are about 10.sup.3 ohm-cm for n-type InP. High resistivity has also been produced in GaP, GaSb, GaAs, and InGaAs by helium bombardment. Stripe geometry lasers and planar photodiodes which incorporate helium-bombarded zones are described.

公开(公告)号：US4599791A

公开(公告)日：1986-07-15

申请号：US555670

申请日：1983-11-28

申请人： Marlin W. Focht ,  Louis A. Koszi ,  Bertram Schwartz

发明人： Marlin W. Focht ,  Louis A. Koszi ,  Bertram Schwartz

IPC分类号： H01L21/762 ,  H01L21/265 ,  H01L21/266 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/74 ,  H01L21/76 ,  H01L21/8252 ,  H01L23/52 ,  H01L23/535 ,  H01L27/15 ,  H01L21/263

CPC分类号： H01L23/535 ,  H01L21/2654 ,  H01L21/266 ,  H01L21/3245 ,  H01L21/743 ,  H01L21/7605 ,  H01L21/8252 ,  H01L2924/0002 ,  Y10S148/084

摘要： The property of materials in the GaAs/AlGaAs system, whereby at certain doses proton bombarded n-type material becomes highly resistive but p-type material remains highly conductive, is utilized to fabrication of integrated circuits which include buried semiconductor interconnections or bus bars between devices.

摘要翻译： 在GaAs / AlGaAs系统中的材料的性质，其中在某些剂量质子轰击的n型材料变成高电阻性，但p型材料保持高导电性，用于制造集成电路，其包括在器件之间的掩埋半导体互连或母线 。