摘要:
A lead-free free-cutting corrosion-resistant silicon-bismuth brass alloy, including the following: between 60.0 and 65.0 wt % of Cu, between 0.6 and 1.8 wt % of Si, between 0.2 and 1.5 wt % of Bi, between 0.02 and 0.5 wt % of Al, less than 1.5 wt % of Ni+Mn+Sn, between 0.01 and 0.5 wt % of La—Ce alloy, between 0.002 and 0.02 wt % of B, with the remainder being Zn and inevitable impurities, wherein the total amount of impurities are no more than 0.5 wt %.
摘要:
A lead-free free-cutting corrosion-resistant silicon-bismuth brass alloy, including the following: between 60.0 and 65.0 wt % of Cu, between 0.6 and 1.8 wt % of Si, between 0.2 and 1.5 wt % of Bi, between 0.02 and 0.5 wt % of Al, less than 1.5 wt % of Ni+Mn+Sn, between 0.01 and 0.5 wt % of La—Ce alloy, between 0.002 and 0.02 wt % of B, with the remainder being Zn and inevitable impurities, wherein the total amount of impurities are no more than 0.5 wt %.
摘要:
FIG. 1 is a front view of the humidifier; FIG. 2 is a back view of the humidifier; FIG. 3 is a right side view of the humidifier; FIG. 4 is a left side view of the humidifier; FIG. 5 is a top view of the humidifier; FIG. 6 is a bottom view of the humidifier; and, FIG. 7 is a top back perspective view of the humidifier. The evenly spaced broken lines and areas within said broken lines depict portions of the humidifier that form no part of the claimed design. In FIG. 6, the dot-dash-dot broken line denotes the boundary of the claimed design and forms no part thereof.
摘要:
FIG. 1 is a front view of a kettlebell; FIG. 2 is a back view of the kettlebell; FIG. 3 is a right view of the kettlebell; FIG. 4 is a left view of the kettlebell; FIG. 5 is a top view of the kettlebell; FIG. 6 is a bottom view of the kettlebell; FIG. 7 is a perspective view of the kettlebell; and, FIG. 8 is a perspective view of the kettlebell. The broken lines depict portions of the article that form no part of the claimed design.
摘要:
Systems and methods for SNMP access are disclosed. A computer-implemented method of SNMP access includes mapping a MIB object in a MIB into an XML object in an XML document, generating a class library based on the XML document, creating a service object representative of a service associated with SNMP access to the MIB object, and linking the class library according to the service object to perform the service.
摘要:
The present invention provides a preparation method of hyperbranched polycarboxylic acid type copolymer cement dispersant, including: Monomer A, B and C undergo a free radical copolymerization in an aqueous medium. The molar ratio of Monomer A, Monomer B and Monomer C conforms to B/A−A−2−10 and C/(A+B−C)−0.02−0.08. Monomer A is expressed by General Formula (1), where, R1 is H or a methyl; X1═O, CH2O, CH2CH2O; m is an integer from 5 to 200.Monomer B is expressed by General Formula (2), where, R2 is H or COOM; R3 is H or CH3 and M is H, Na, K or NH4;Monomer C is expressed by General Formula (3), where, R4 is H or methyl; X2═O, CH2O, CH2CH2O; Y═CH2, CH2CH2, CH(CH3), CH2CH2CH2, CH(CH3)CH2, C(CH3)2 and n is an integer from 5 to 200.
摘要:
The invention relates to a gas discharge lamp having at least one electrode and to a method for producing an electrode. According to the invention, the structure of a section (30) of the electrode (20, 22) is at least partially transformed by means of high-energy radiation, preferably laser radiation.
摘要:
The corrosion resistance of a metal substrate surface treated with an acidic aqueous composition to form a conversion coating is improved by first contacting the surface with an oxidizing acidic pre-rinse, such as an aqueous solution of nitric acid and hydrogen peroxide, or nitric acid and hydrofluoric acid, or Fe+3 cations and hydrofluoric acid.
摘要:
The present invention provides a preparation method of hyperbranched polycarboxylic acid type copolymer cement dispersant, including: Monomer A, B and C undergo a free radical copolymerization in an aqueous medium. The molar ratio of Monomer A, Monomer B and Monomer C conforms to B/A-A-2-10 and C/(A+B-C)-0.02-0.08. Monomer A is expressed by General Formula (1), where, R1 is H or a methyl; X1═O, CH2O, CH2CH2O; m is an integer from 5 to 200.Monomer B is expressed by General Formula (2), where, R2 is H or COOM; R3 is H or CH3 and M is H, Na, K or NH4; Monomer C is expressed by General Formula (3), where, R4 is H or methyl; X2═O, CH2O, CH2CH2O; Y═CH2, CH2CH2, CH(CH3), CH2CH2CH2, CH(CH3)CH2, C(CH3)2 and n is an integer from 5 to 200