公开(公告)号：US20090146311A1

公开(公告)日：2009-06-11

申请号：US12370602

申请日：2009-02-13

申请人： Feng-Yu Hsu ,  Chih-Chien Liu ,  Chun-Chieh Huang ,  Jei-Ming Chen ,  Shu-Jen Sung

发明人： Feng-Yu Hsu ,  Chih-Chien Liu ,  Chun-Chieh Huang ,  Jei-Ming Chen ,  Shu-Jen Sung

IPC分类号： H01L23/52

CPC分类号： H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure is disposed on a substrate with a conductive part thereon and includes a first porous low-k layer on the substrate, a damascene structure in the first porous low-k layer, a second porous low-k layer over the first porous low-k layer and the damascene structure, and a first UV cutting layer at least between the first porous low-k layer and the second porous low-k layer. The damascene structure is electrically connected with the conductive part. The UV cutting layer is a UV reflection layer or a UV reflection-absorption layer.

摘要翻译： 互连结构设置在其上具有导电部分的衬底上，并且在衬底上包括第一多孔低k层，第一多孔低k层中的镶嵌结构，第一多孔低k层上的第二多孔低k层 -k层和镶嵌结构，以及至少在第一多孔低k层和第二多孔低k层之间的第一UV切割层。 镶嵌结构与导电部分电连接。 UV切割层是UV反射层或UV反射吸收层。

公开(公告)号：US07514347B2

公开(公告)日：2009-04-07

申请号：US11307161

申请日：2006-01-26

申请人： Feng-Yu Hsu ,  Chih-Chien Liu ,  Chun-Chieh Huang ,  Jei-Ming Chen ,  Shu-Jen Sung

发明人： Feng-Yu Hsu ,  Chih-Chien Liu ,  Chun-Chieh Huang ,  Jei-Ming Chen ,  Shu-Jen Sung

IPC分类号： H01L21/44

CPC分类号： H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure is described, disposed on a substrate with a conductive part thereon and including a first porous low-k layer on the substrate, a damascene structure in the first porous low-k layer electrically connecting with the conductive part, a second porous low-k layer over the first porous low-k layer and the damascene structure, and a UV cutting layer at least between the first and the second porous low-k layers, wherein the UV cutting layer is a UV reflection layer or a UV reflection-absorption layer.

摘要翻译： 描述了布置在其上具有导电部分的基板上并且在基板上包括第一多孔低k层的基板上的互连结构，与导电部分电连接的第一多孔低k层中的镶嵌结构，第二多孔低 -k层，以及至少在第一和第二多孔低k层之间的UV切割层，其中UV切割层是UV反射层或UV反射层， 吸收层。

公开(公告)号：US20070085210A1

公开(公告)日：2007-04-19

申请号：US11307161

申请日：2006-01-26

申请人： Feng-Yu Hsu ,  Chih-Chien Liu ,  Chun-Chieh Huang ,  Jei-Ming Chen ,  Shu-Jen Sung

发明人： Feng-Yu Hsu ,  Chih-Chien Liu ,  Chun-Chieh Huang ,  Jei-Ming Chen ,  Shu-Jen Sung

IPC分类号： H01L23/52

CPC分类号： H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure is described, disposed on a substrate with a conductive part thereon and including a first porous low-k layer on the substrate, a damascene structure in the first porous low-k layer electrically connecting with the conductive part, a second porous low-k layer over the first porous low-k layer and the damascene structure, and a UV cutting layer at least between the first and the second porous low-k layers, wherein the UV cutting layer is a UV reflection layer or a UV reflection-absorption layer.

摘要翻译： 描述了布置在其上具有导电部分的基板上并且在基板上包括第一多孔低k层的基板上的互连结构，与导电部分电连接的第一多孔低k层中的镶嵌结构，第二多孔低 -k层，以及至少在第一和第二多孔低k层之间的UV切割层，其中UV切割层是UV反射层或UV反射层， 吸收层。

公开(公告)号：US20070032058A1

公开(公告)日：2007-02-08

申请号：US11161431

申请日：2005-08-03

申请人： Shu-Jen Sung

发明人： Shu-Jen Sung

IPC分类号： H01L21/44

CPC分类号： H01L21/76849 ,  H01L21/76835 ,  H01L21/76864

摘要： A method of fabricating interconnect is described. A first dielectric layer having an opening is formed over a substrate. A metal layer is filled into the opening. A material layer is formed over the first dielectric layer and the metal layer. A surface treatment process is performed to the material layer so as to form a cap layer on the surface of the metal layer. The material layer and a portion of the first dielectric layer are removed. A second dielectric layer is formed over the substrate, and the surface of the second dielectric layer is higher than that of the cap layer. A planarization process is performed at least to remove a portion of the second dielectric layer and a portion of the cap layer so as to expose the top of the opening.

摘要翻译： 描述制造互连的方法。 在衬底上形成具有开口的第一电介质层。 将金属层填充到开口中。 在第一电介质层和金属层上形成材料层。 对材料层进行表面处理工艺，以在金属层的表面上形成盖层。 去除材料层和第一介电层的一部分。 第二电介质层形成在衬底上，并且第二电介质层的表面高于覆盖层的表面。 至少进行平坦化处理以去除第二电介质层的一部分和盖层的一部分以露出开口的顶部。

公开(公告)号：US07348272B2

公开(公告)日：2008-03-25

申请号：US11161431

申请日：2005-08-03

申请人： Shu-Jen Sung

发明人： Shu-Jen Sung

IPC分类号： H01L21/44

CPC分类号： H01L21/76849 ,  H01L21/76835 ,  H01L21/76864

摘要： A method of fabricating interconnect is described. A first dielectric layer having an opening is formed over a substrate. A metal layer is filled into the opening. A material layer is formed over the first dielectric layer and the metal layer. A surface treatment process is performed to the material layer so as to form a cap layer on the surface of the metal layer. The material layer and a portion of the first dielectric layer are removed. A second dielectric layer is formed over the substrate, and the surface of the second dielectric layer is higher than that of the cap layer. A planarization process is performed at least to remove a portion of the second dielectric layer and a portion of the cap layer so as to expose the top of the opening.

摘要翻译： 描述制造互连的方法。 在衬底上形成具有开口的第一电介质层。 将金属层填充到开口中。 在第一电介质层和金属层上形成材料层。 对材料层进行表面处理工艺，以在金属层的表面上形成盖层。 去除材料层和第一介电层的一部分。 第二电介质层形成在衬底上，并且第二电介质层的表面高于覆盖层的表面。 至少进行平坦化处理以去除第二电介质层的一部分和盖层的一部分以露出开口的顶部。