公开(公告)号：US20090127723A1

公开(公告)日：2009-05-21

申请号：US12102616

申请日：2008-04-14

申请人： Fenghong ZHANG ,  Xinyu Zhang

发明人： Fenghong ZHANG ,  Xinyu Zhang

IPC分类号： H01L23/544 ,  G03F7/00 ,  G01B11/03

CPC分类号： G03F7/70633 ,  G03F1/70 ,  G03F9/7049 ,  G03F9/7053 ,  G03F9/7076 ,  G03F9/7084 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Alignment targets include optically resolvable regions and SEM resolvable regions. SEM measurements taken of the SEM resolvable regions produce correction factors that can be applied to optical measurements taken of the optically resolvable regions where the correction factors improve the accuracy of the optical measurements. When one or more batches of wafers from a continuous production run are to be measured, a small sub-sample is measured with use of an SEM scan of their SEM resolvable regions. Then the correction factors developed from the SEM scans are applied to optical measurements taken of others of the wafers in the same mass production run.

摘要翻译： 对准目标包括光学可分辨区域和SEM可分辨区域。 SEM可分辨区域的SEM测量产生可用于光学可分辨区域的光学测量的校正因子，其中校正因子提高了光学测量的精度。 当测量来自连续生产运行的一批或多批晶片时，使用其SEM可分辨区域的SEM扫描来测量小的子样品。 然后，从SEM扫描发展出的校正因子被应用于在相同批量生产运行中对其他晶片进行的光学测量。