摘要:
In photolithographic exposure, a feature (144) of an optical mask is projected onto a dark area (160). The light intensity inside the dark area is reduced by providing a non-printable clear cutout (410) inside the feature. The optical mask has the same optical pathlength outside the feature (144) adjacent to the entire outer boundary of the feature as at the cutout, the optical pathlength being measured along the optical mask's thickness.
摘要:
Alignment targets include optically resolvable regions and SEM resolvable regions. SEM measurements taken of the SEM resolvable regions produce correction factors that can be applied to optical measurements taken of the optically resolvable regions where the correction factors improve the accuracy of the optical measurements. When one or more batches of wafers from a continuous production run are to be measured, a small sub-sample is measured with use of an SEM scan of their SEM resolvable regions. Then the correction factors developed from the SEM scans are applied to optical measurements taken of others of the wafers in the same mass production run.
摘要:
In photolithographic exposure, a feature (144) of an optical mask is projected onto a dark area (160). The light intensity inside the dark area is reduced by providing a non-printable clear cutout (410) inside the feature. The optical mask has the same optical pathlength outside the feature (144) adjacent to the entire outer boundary of the feature as at the cutout, the optical pathlength being measured along the optical mask's thickness.
摘要:
A pillar array is printed in positive photoresist using an optical mask (108) having an array of features (310) corresponding to the pillars. The pillars' width/length dimensions are below the exposure wavelength. Superior results can be achieved (less peeling off of the pillars and less overexposure at the center of each pillar) if the mask features (310) are downsized relative to the pillars' target sizes, and the exposure energy is reduced. Negative photoresist (with a dark field mask) can be used, and can provide good results (in terms of pillars peeling-off) if the combined area of the features (410) corresponding to the pillars is smaller than the area between the features (410).
摘要:
In photolithographic exposure, the illumination pattern (120R) formed on a photosensitive surface (106) is a reverse of the pattern (130) on the optical mask (124). The reverse pattern (120R) is obtained using off-axis illumination when the photosensitive surface is at other than the best focus position.
摘要:
A social networking system server which includes a processor, wherein the processor utilizes computer readable program code to initiate, implement, and conclude, a travel plan. The computer readable program code comprising a series of computer readable program steps to effect coordinating a global, on-line social networking system (“SNS”). The computer readable program code further includes a series of computer readable program steps to effect initiating a travel plan for a first SNS member, purchasing goods on-line, implementing a tour plan, and concluding the tour plan.
摘要:
A method and an apparatus for transmitting a physical random access channel signal are disclosed by in the present invention. The method includes: when transmitting a physical random access channel (PRACH) signal, a terminal carries out pre-compensation for the frequency domain signal according to the estimated frequency spectrum gain of downlink channel, converting it into the time domain signal and transmits it to the base station. In the present invention, by way of measuring the spectral response of the downlink channel and carrying out pre-compensation for the frequency selective fading when transmitting the PRACH signal, using the symmetry of the uplink channel and downlink channel in the TD system, the adverse effect on the PRACH detection due to multipath channel could be effectively eliminated and the detection probability of the PRACH signal and measuring accuracy of transmission delay could be improved.
摘要:
In one embodiment, a method includes providing two structures with a spacing therebetween over a semiconductor substrate, providing a conformal first layer over the two structures and within the space therebetween, depositing a conformal protective layer over the first layer, planarizing the protective layer until a top surface of the first layer is exposed, and planarizing the first layer and the protective layer until a top surface of the two structures is exposed and a portion of the protective layer is between the two structures.
摘要:
The present invention includes compositions and methods for the controlled formation of nano and micropolymers in a single-step that includes a structural substrate, an oxidatively reactive monomer and an oxidant to form a polymer that takes the morphology of the structural substrate.
摘要:
A SAN management software program controls access to resources in the SAN by associating individual users with one or more administration domains. A user that is associated with an administration domain that includes a port of a SAN switch can configure or otherwise access the port but is restricted from accessing ports outside of that administration domain. Likewise, access to other sub-fabric resources can be restricted and allowed to individual users and users in specific roles or groups. In this manner, the SAN administrative user has very specific control over which users can access which SAN resources and what level of access these users are granted.