公开(公告)号：US20170092799A1

公开(公告)日：2017-03-30

申请号：US15374467

申请日：2016-12-09

申请人： First Solar, Inc.

发明人： Charles Edward Wickersham

IPC分类号： H01L31/073 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0224

CPC分类号： H01L31/073 ,  C30B1/023 ,  C30B1/12 ,  C30B29/48 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/1872 ,  H01L31/20 ,  Y02E10/543 ,  Y02P70/521

摘要： A method for manufacturing a photovoltaic device includes a step of depositing one of an amorphous layer of ZnTe and a multilayer stack of Zn and Te adjacent a semiconductor layer. The one of the amorphous layer and the multilayer stack is then subjected to an energy impulse at a temperature equal to or greater than its critical temperature. The energy impulse results in an explosive crystallization to form a polycrystalline layer of ZnTe from the one of the amorphous layer and the multilayer stack.

公开(公告)号：US20140090704A1

公开(公告)日：2014-04-03

申请号：US14041357

申请日：2013-09-30

申请人： First Solar, Inc.

发明人： Charles Edward Wickersham

IPC分类号： H01L31/0224

CPC分类号： H01L31/073 ,  C30B1/023 ,  C30B1/12 ,  C30B29/48 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/1872 ,  H01L31/20 ,  Y02E10/543 ,  Y02P70/521

摘要： A method for manufacturing a photovoltaic device includes a step of depositing one of an amorphous layer of ZnTe and a multilayer stack of Zn and Te adjacent a semiconductor layer. The one of the amorphous layer and the multilayer stack is then subjected to an energy impulse at a temperature equal to or greater than its critical temperature. The energy impulse results in an explosive crystallization to form a polycrystalline layer of ZnTe from the one of the amorphous layer and the multilayer stack.

摘要翻译： 制造光伏器件的方法包括沉积ZnTe的非晶层和邻近半导体层的Zn和Te的多层堆叠之一的步骤。 然后将非晶层和多层堆叠中的一个在等于或大于其临界温度的温度下进行能量脉冲。 能量脉冲导致爆炸性结晶，从非晶层和多层堆叠中的一个形成ZnTe的多晶层。

公开(公告)号：US09543457B2

公开(公告)日：2017-01-10

申请号：US14041357

申请日：2013-09-30

申请人： First Solar, Inc.

发明人： Charles Edward Wickersham

IPC分类号： H01L31/0224 ,  H01L31/073 ,  H01L31/18 ,  H01L31/20 ,  C30B1/02 ,  C30B1/12 ,  C30B29/48

CPC分类号： H01L31/073 ,  C30B1/023 ,  C30B1/12 ,  C30B29/48 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/1872 ,  H01L31/20 ,  Y02E10/543 ,  Y02P70/521

摘要： A method for manufacturing a photovoltaic device includes a step of depositing one of an amorphous layer of ZnTe and a multilayer stack of Zn and Te adjacent a semiconductor layer. The one of the amorphous layer and the multilayer stack is then subjected to an energy impulse at a temperature equal to or greater than its critical temperature. The energy impulse results in an explosive crystallization to form a polycrystalline layer of ZnTe from the one of the amorphous layer and the multilayer stack.

摘要翻译： 制造光伏器件的方法包括沉积ZnTe的非晶层和邻近半导体层的Zn和Te的多层堆叠之一的步骤。 然后将非晶层和多层堆叠中的一个在等于或大于其临界温度的温度下进行能量脉冲。 能量脉冲导致爆炸性结晶，从非晶层和多层堆叠中的一个形成ZnTe的多晶层。