公开(公告)号：US20250063848A1

公开(公告)日：2025-02-20

申请号：US18723069

申请日：2022-12-23

Applicant: First Solar, Inc.

Inventor： Tursun Ablekim ,  Sachit Grover ,  James Hack ,  Elline Hettiaratchy ,  Taylor Hill ,  Sergei Kniajanski ,  Wyatt Metzger ,  Nicholas Valdes ,  Gang Xiong

IPC: H01L31/0368 ,  H01L31/0296 ,  H01L31/18

Abstract: Provided are photovoltaic devices with polycrystalline type II-VI semiconductor absorber materials including n-type absorber compositions and having p-type hole contact layers are described herein. Methods of treating semiconductor absorber layers and forming hole contact layers are described.

公开(公告)号：US20240015992A1

公开(公告)日：2024-01-11

申请号：US18039820

申请日：2021-12-01

Applicant: First Solar, Inc.

Inventor： Duyen Cao ,  Markus Gloeckler ,  Sachit Grover ,  James Hack ,  Chungho Lee ,  Dingyuan Lu ,  Aravamuthan Varadarajan ,  Gang Xiong ,  Zhibo Zhao

IPC: H10K30/10 ,  H10K71/12

CPC classification number: H10K30/10 ,  H10K71/12

Abstract: Photovoltaic devices (100) with type ll-VI semiconductor absorber materials (160) having p-type contact layers (180) are obtained by forming a ll-VI absorber layer over a substrate stack (113), wherein the type II material includes cadmium (Cd) and the type VI material includes tellurium (Te); contacting an alkaline wash fluid, comprising a hydroxide, to a second surface of the absorber layer to produce a Cd-rich surface, depositing a p-type contact layer (180) over the absorber layer (160), whereby the p-type contact layer is directly adjacent to the Cd-rich layer, and wherein the p-type contact layer comprises at least one of: PTAA, P3HT, poly-TPD, TFB, TTF-1, TF8-TAA, TIF8-TAA, SGT-407, PCDTBT, SpiroOMeTAD, anthracene-based HTM, polythiophene, semiconducting polymers, NiO, CuSCN, or Cui; and depositing a conductive layer (190) over the p-type contact layer.