公开(公告)号：US20250063848A1

公开(公告)日：2025-02-20

申请号：US18723069

申请日：2022-12-23

Applicant: First Solar, Inc.

Inventor： Tursun Ablekim ,  Sachit Grover ,  James Hack ,  Elline Hettiaratchy ,  Taylor Hill ,  Sergei Kniajanski ,  Wyatt Metzger ,  Nicholas Valdes ,  Gang Xiong

IPC: H01L31/0368 ,  H01L31/0296 ,  H01L31/18

Abstract: Provided are photovoltaic devices with polycrystalline type II-VI semiconductor absorber materials including n-type absorber compositions and having p-type hole contact layers are described herein. Methods of treating semiconductor absorber layers and forming hole contact layers are described.