Abstract:
Sputtering chambers including one or more first sputtering targets within the sputtering chamber and one or more second sputtering targets are generally provided. Each first sputtering target comprises a source material, and each second sputtering target comprises the source material and a dopant. A conveyor system is configured to transport a plurality of substrates through the sputtering chamber to deposit a thin film onto a surface of each substrate. A power source is electrically connected to each of the first sputtering targets and the second sputtering target. A target shield can also be included within the sputtering chamber, and can be positioned between a portion of the second sputtering target and the conveyor system. The dopant can be present within the second sputtering target as a discrete insert within a cavity defined by the source material. Methods are also provided for making a sputtering target and depositing a thin film.