METHODS AND APPARATUS FOR CONTROLLING DOPANT CONCENTRATION IN THIN FILMS FORMED VIA SPUTTERING DEPOSITION
    1.
    发明申请
    METHODS AND APPARATUS FOR CONTROLLING DOPANT CONCENTRATION IN THIN FILMS FORMED VIA SPUTTERING DEPOSITION 审中-公开
    用于控制通过溅射沉积形成的薄膜中的浓度浓度的方法和装置

    公开(公告)号:US20140238849A1

    公开(公告)日:2014-08-28

    申请号:US13775613

    申请日:2013-02-25

    CPC classification number: C23C14/3407 C23C14/086 C23C14/3414

    Abstract: Sputtering chambers including one or more first sputtering targets within the sputtering chamber and one or more second sputtering targets are generally provided. Each first sputtering target comprises a source material, and each second sputtering target comprises the source material and a dopant. A conveyor system is configured to transport a plurality of substrates through the sputtering chamber to deposit a thin film onto a surface of each substrate. A power source is electrically connected to each of the first sputtering targets and the second sputtering target. A target shield can also be included within the sputtering chamber, and can be positioned between a portion of the second sputtering target and the conveyor system. The dopant can be present within the second sputtering target as a discrete insert within a cavity defined by the source material. Methods are also provided for making a sputtering target and depositing a thin film.

    Abstract translation: 通常提供包括溅射室内的一个或多个第一溅射靶和一个或多个第二溅射靶的溅射室。 每个第一溅射靶包括源材料,并且每个第二溅射靶包括源材料和掺杂剂。 输送机系统被配置为通过溅射室输送多个基板以将薄膜沉积到每个基板的表面上。 电源电连接到第一溅射靶和第二溅射靶中的每一个。 目标屏蔽也可以包括在溅射室内,并且可以位于第二溅射靶的一部分和输送系统之间。 掺杂剂可以作为在由源材料限定的空腔内的分立插入物存在于第二溅射靶内。 还提供了制造溅射靶并沉积薄膜的方法。

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