公开(公告)号：US09564543B2

公开(公告)日：2017-02-07

申请号：US14546697

申请日：2014-11-18

Applicant: First Solar, Inc.

Inventor： Scott Daniel Feldman-Peabody ,  Robert Dwayne Gossman

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/073

CPC classification number: H01L31/0288 ,  H01L31/0203 ,  H01L31/022483 ,  H01L31/02963 ,  H01L31/0445 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/543

Abstract: Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing).

Abstract translation: 提供了在薄膜光伏器件中掺杂p-n异质结的吸收层的方法。 该方法可以包括在透明衬底上沉积窗口层，其中窗口层包括至少一种掺杂剂（例如铜）。 可以在窗口层上形成p-n异质结，其中p-n异质结在吸收层中包括光电材料（例如碲化镉）。 掺杂剂然后可以从窗口层扩散到吸收层（例如，通过退火）。

公开(公告)号：US09000549B2

公开(公告)日：2015-04-07

申请号：US13676550

申请日：2012-11-14

Applicant: First Solar, Inc.

Inventor： Robert Dwayne Gossman ,  Scott Daniel Feldman-Peabody ,  Bastiaan Arie Korevaar

IPC: H01L31/02 ,  H01L31/18 ,  H01L31/073 ,  H01L31/0352

CPC classification number: H01L31/073 ,  H01L31/035218 ,  Y02E10/543

Abstract: Thin film photovoltaic devices are provided. The device includes a transparent substrate; a transparent conductive oxide layer on the transparent substrate; an n-type window layer on the transparent conductive oxide layer, an absorber layer on the n-type window layer, and a back contact layer on the absorber layer. The n-type window layer includes a plurality of nanoparticles spatially distributed within a medium, with the nanoparticles comprising cadmium sulfide. In one embodiment, the medium has an optical bandgap that is greater than about 3.0 eV (e.g., includes a material other than cadmium sulfide). Methods are also provided for such thin film photovoltaic devices.

Abstract translation: 提供薄膜光伏器件。 该装置包括透明基板; 在透明基板上的透明导电氧化物层; 透明导电氧化物层上的n型窗口层，n型窗口层上的吸收层和吸收层上的背面接触层。 n型窗口层包括在介质内空间分布的多个纳米颗粒，纳米颗粒包含硫化镉。 在一个实施例中，介质具有大于约3.0eV的光学带隙（例如，包括除硫化镉之外的材料）。 还提供了这种薄膜光伏器件的方法。

公开(公告)号：US20140238849A1

公开(公告)日：2014-08-28

申请号：US13775613

申请日：2013-02-25

Applicant: First Solar, Inc.

Inventor： Scott Daniel Feldman-Peabody ,  Stacy Ann Black ,  Robert Dwayne Gossman ,  Patrick Lynch O'Keefe

IPC: C23C14/34 ,  C23C14/56

CPC classification number: C23C14/3407 ,  C23C14/086 ,  C23C14/3414

Abstract: Sputtering chambers including one or more first sputtering targets within the sputtering chamber and one or more second sputtering targets are generally provided. Each first sputtering target comprises a source material, and each second sputtering target comprises the source material and a dopant. A conveyor system is configured to transport a plurality of substrates through the sputtering chamber to deposit a thin film onto a surface of each substrate. A power source is electrically connected to each of the first sputtering targets and the second sputtering target. A target shield can also be included within the sputtering chamber, and can be positioned between a portion of the second sputtering target and the conveyor system. The dopant can be present within the second sputtering target as a discrete insert within a cavity defined by the source material. Methods are also provided for making a sputtering target and depositing a thin film.

Abstract translation: 通常提供包括溅射室内的一个或多个第一溅射靶和一个或多个第二溅射靶的溅射室。 每个第一溅射靶包括源材料，并且每个第二溅射靶包括源材料和掺杂剂。 输送机系统被配置为通过溅射室输送多个基板以将薄膜沉积到每个基板的表面上。 电源电连接到第一溅射靶和第二溅射靶中的每一个。 目标屏蔽也可以包括在溅射室内，并且可以位于第二溅射靶的一部分和输送系统之间。 掺杂剂可以作为在由源材料限定的空腔内的分立插入物存在于第二溅射靶内。 还提供了制造溅射靶并沉积薄膜的方法。

公开(公告)号：US20170104108A1

公开(公告)日：2017-04-13

申请号：US15384627

申请日：2016-12-20

Applicant: First Solar, Inc.

Inventor： Scott Daniel Feldman-Peabody ,  Robert Dwayne Gossman

IPC: H01L31/0288 ,  H01L31/0203 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0445 ,  H01L31/073

CPC classification number: H01L31/0288 ,  H01L31/0203 ,  H01L31/022483 ,  H01L31/02963 ,  H01L31/0445 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/543

Abstract: Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g,. copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing).

公开(公告)号：US20150072466A1

公开(公告)日：2015-03-12

申请号：US14546697

申请日：2014-11-18

Applicant: First Solar, Inc.

Inventor： Scott Daniel Feldman-Peabody ,  Robert Dwayne Gossman

IPC: H01L31/18 ,  H01L31/073 ,  H01L31/0296

CPC classification number: H01L31/0288 ,  H01L31/0203 ,  H01L31/022483 ,  H01L31/02963 ,  H01L31/0445 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/543

Abstract: Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing).

Abstract translation: 提供了在薄膜光伏器件中掺杂p-n异质结的吸收层的方法。 该方法可以包括在透明衬底上沉积窗口层，其中窗口层包括至少一种掺杂剂（例如铜）。 可以在窗口层上形成p-n异质结，其中p-n异质结在吸收层中包括光电材料（例如碲化镉）。 掺杂剂然后可以从窗口层扩散到吸收层（例如，通过退火）。