Patent search ap:("First Solar Page Inc.") AND inv:"Shahram Seyedmohammadi"

1.

发明授权
Doped photovoltaic semiconductor layers and methods of making 有权

公开(公告)号：US11158749B2

公开(公告)日：2021-10-26

申请号：US16488275

申请日：2018-02-22

Applicant: First Solar, Inc.

Inventor： Sachit Grover , Stuart Irvine , Xiaoping Li , Roger Malik , Shahram Seyedmohammadi , Gang Xiong , Wei Zhang

IPC: H01L31/18 , H01L31/0296

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

2.

发明公开
DOPED PHOTOVOLTAIC SEMICONDUCTOR LAYERS AND METHODS OF MAKING 审中-公开

公开(公告)号：US20240063316A1

公开(公告)日：2024-02-22

申请号：US18380519

申请日：2023-10-16

Applicant: First Solar, Inc.

Inventor： Sachit Grover , Stuart Irvine , Xiaoping Li , Roger Malik , Shahram Seyedmohammadi , Gang Xiong , Wei Zhang

IPC: H01L31/0296 , H01L31/18

CPC classification number: H01L31/02963 , H01L31/1828 , H01L31/1864

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

3.

发明申请
DOPED PHOTOVOLTAIC SEMICONDUCTOR LAYERS AND METHODS OF MAKING 有权

公开(公告)号：US20210143288A1

公开(公告)日：2021-05-13

申请号：US16488275

申请日：2018-02-22

Applicant: First Solar, Inc.

Inventor： Sachit Grover , Stuart Irvine , Xiaoping Li , Roger Malik , Shahram Seyedmohammadi , Gang Xiong , Wei Zhang

IPC: H01L31/0296 , H01L31/18

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

4.

发明授权
Doped photovoltaic semiconductor layers and methods of making 有权

公开(公告)号：US11791427B2

公开(公告)日：2023-10-17

申请号：US17509710

申请日：2021-10-25

Applicant: First Solar, Inc.

Inventor： Sachit Grover , Stuart Irvine , Xiaoping Li , Roger Malik , Shahram Seyedmohammadi , Gang Xiong , Wei Zhang

IPC: H01L31/0296 , H01L31/18

CPC classification number: H01L31/02963 , H01L31/1828 , H01L31/1864

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

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