公开(公告)号：US20100226170A1

公开(公告)日：2010-09-09

申请号：US12398913

申请日：2009-03-05

申请人： Fong-Long Lin ,  Tingniu Deng

发明人： Fong-Long Lin ,  Tingniu Deng

IPC分类号： G11C16/02 ,  G11C16/06 ,  G11C5/14

CPC分类号： G11C5/141 ,  G11C5/143 ,  G11C5/144 ,  G11C16/22

摘要： An electrically programmable non-volatile memory device comprises a memory circuit which includes an array of non-volatile memory cells. Each memory cell is capable of being programmed. A programming circuit can generate a programming signal to program one or more of the memory cells. A voltage detector circuit is connected to a voltage source which outputs a certain voltage. The voltage detector circuit detects when the certain voltage has decreased to a certain level, and in response thereto, the voltage detector provides an output signal to the memory controller to complete the on-going programming command sequence and to power down itself. An auxiliary voltage source maintains voltage to the memory circuit for a period of time sufficient for the programming circuit to complete the programming of the one or more of the memory cells, when the certain voltage is at or below the certain level.

摘要翻译： 一种电可编程的非易失性存储器件包括一个包括非易失性存储器单元阵列的存储器电路。 每个存储单元都能被编程。 编程电路可以产生编程信号以编程一个或多个存储器单元。 电压检测器电路连接到输出一定电压的电压源。 电压检测器电路检测某一电压何时降低到一定水平，并且响应于此，电压检测器向存储器控制器提供输出信号以完成正在进行的编程命令序列并使其自身断电。 当一定电压处于或低于某一水平时，辅助电压源将电压维持到存储器电路一段足以使编程电路完成一个或多个存储器单元的编程的时间。