公开(公告)号：US20030115749A1

公开(公告)日：2003-06-26

申请号：US10027476

申请日：2001-12-21

Applicant: FormFactor, Inc.

Inventor： Jimmy Kuo Chen

IPC: H01K003/22

CPC classification number: H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13655 ,  H01L2224/45144 ,  H01L2224/81801 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K3/22 ,  H05K3/4092 ,  Y10T29/49142 ,  Y10T29/49144 ,  Y10T29/49149 ,  Y10T29/49158 ,  Y10T29/49179 ,  Y10T29/49204 ,  Y10T29/49213 ,  Y10T29/49222 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for heat-treating a plurality of microelectronic structures attached to a non-metallic substrate is disclosed. Each of the plurality of microelectronic structures is comprised of a metallic material, and ones of the plurality of metallic microelectronic structures are insulated from other ones of the plurality of microelectronic structures. An application of the method is for heat-treatment of resilient microstructures. The method comprises the steps of: (a) placing the non-metallic substrate and the plurality of microelectronic structures in an oscillating electromagnetic field, whereby the plurality of microelectronic structures are heated by the oscillating electromagnetic field and the non-metallic substrate is essentially not heated by the oscillating electromagnetic field; (b) maintaining the non-metallic substrate and the plurality of microelectronic structures in the oscillating electromagnetic field until each of the plurality of microelectronic structures obtains a defined heat-treatment temperature substantially greater than an ambient temperature; (c) removing the non-metallic substrate and the plurality of microelectronic structures from the oscillating electromagnetic field; and (d) cooling the plurality of microelectronic structures to the ambient temperature.

Abstract translation: 公开了一种用于热处理附着在非金属基底上的多个微电子结构的方法。 多个微电子结构中的每一个由金属材料构成，并且多个金属微电子结构中的一个与多个微电子结构中的其它微电子结构绝缘。 该方法的应用是用于热处理弹性微结构。 该方法包括以下步骤：（a）将非金属基底和多个微电子结构放置在振荡电磁场中，由此多个微电子结构被振荡电磁场加热，非金属基底基本上不是 由振荡电磁场加热; （b）将所述非金属基底和所述多个微电子结构保持在所述振荡电磁场中，直到所述多个微电子结构中的每一个获得明显大于环境温度的限定的热处理温度; （c）从振荡电磁场中去除非金属基底和多个微电子结构; 和（d）将多个微电子结构冷却至环境温度。