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    Method and apparatus for detecting a leak of external air into a plasma reactor
    1.
    发明申请
    Method and apparatus for detecting a leak of external air into a plasma reactor 审中-公开
    用于检测外部空气泄漏到等离子体反应器中的方法和装置

    公开(公告)号：US20050037500A1

    公开(公告)日：2005-02-17

    申请号：US10652862

    申请日：2003-08-29

    申请人： Francesco Ciovacco ,  Fabio Somboli ,  Giuseppe Fazio ,  Simone Alba

    发明人： Francesco Ciovacco ,  Fabio Somboli ,  Giuseppe Fazio ,  Simone Alba

    IPC分类号： H01J37/32 ,  G01N21/00

    CPC分类号： H01J37/3244

    摘要： A method (300) and a corresponding apparatus for detecting a leak of external air into a plasma reactor are proposed. The method includes: establishing (340) a plasma inside the reactor, the plasma having a composition suitable to generate at least one predetermined compound when reacting with the air, detecting (345) a light emission of the plasma, and analyzing (350-375) the light emission to identify the presence of the at least one predetermined compound.

    摘要翻译： 提出了一种用于检测外部空气泄漏到等离子体反应器中的方法（300）和相应的装置。 该方法包括：在反应器内建立（340）等离子体，所述等离子体具有适合于在与空气反应时产生至少一种预定化合物的组合物，检测（345）等离子体的发光并分析（350-375 ）发光以识别至少一种预定化合物的存在。

    Method for patterning on a wafer having at least one substrate for the realization of an integrated circuit
    2.
    发明申请
    Method for patterning on a wafer having at least one substrate for the realization of an integrated circuit 审中-公开
    在具有用于实现集成电路的至少一个衬底的晶片上进行图案化的方法

    公开(公告)号：US20060261036A1

    公开(公告)日：2006-11-23

    申请号：US11401113

    申请日：2006-04-10

    申请人： Giuseppe Fazio ,  Alessandro Spandre ,  Pietro Petruzza

    发明人： Giuseppe Fazio ,  Alessandro Spandre ,  Pietro Petruzza

    IPC分类号： G01L21/30 ,  H01L21/302 ,  C23F1/00 ,  B44C1/22

    CPC分类号： H01L21/31116

    摘要： A method is provided for patterning a wafer comprising at least one substrate for the manufacture of an integrated circuit. The method comprises: etching at least one portion of the substrate with a reactive gas plasma to obtain an optical emission signal, resulting from the products of the reaction between the plasma and the substrate and having a predetermined spectral fingerprint; carrying on the etching of the substrate up to a predetermined end point; and monitoring the spectral fingerprint of the optical emission signal to detect the etching end point. The method comprises the further insertion of an inert gas in the plasma to obtain an increase in the intensity of the optical emission signal.

    摘要翻译： 提供了一种用于图案化包括至少一个用于制造集成电路的衬底的晶片的方法。 该方法包括：用反应气体等离子体蚀刻衬底的至少一部分，以获得由等离子体和衬底之间的反应产物产生并具有预定光谱指纹的光发射信号; 进行基板的蚀刻直到预定的端点; 并监测光发射信号的光谱指纹，以检测蚀刻终点。 该方法包括在等离子体中进一步插入惰性气体以获得光发射信号强度的增加。