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公开(公告)号：US07834383B2
公开(公告)日：2010-11-16
申请号：US12481056
申请日：2009-06-09
申请人： Chintamani P. Palsule , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
发明人： Chintamani P. Palsule , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14643 , H01L27/14601 , H01L29/66659 , H01L31/035281
摘要： A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate. A channel implant of the first conductivity type extending from between a midpoint of the transfer gate and the floating diffusion to at least across the photodiode and having a dopant concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than the floating diffusion, and wherein a peak dopant concentration of the channel implant is at a level and at a depth below the surface such that a partially-buried channel is formed in the transfer region between the photodiode and floating diffusion when the transfer gate is energized.
摘要翻译： 包括具有第一导电类型并具有表面的衬底的像素，与第一导电类型相反的第二导电类型的光电检测器，第二导电类型的浮动扩散区域，光电检测器和浮动扩散区之间的传输区域 位于所述转印区域上方并且部分地与所述光电检测器重叠的栅极以及至少从所述栅极延伸穿过所述光电检测器的所述第一导电类型的钉扎层。 第一导电类型的沟道植入物从传输栅极的中点和浮动扩散延伸到至少跨越光电二极管并具有掺杂剂浓度，使得传输区域的掺杂剂浓度在接近光电检测器处比浮置 扩散，并且其中沟道注入的峰值掺杂剂浓度处于表面以下的水平和深度，使得当传输栅极通电时，在光电二极管和浮动扩散之间的传输区域中形成部分埋置的沟道。
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公开(公告)号：US07115924B1
公开(公告)日：2006-10-03
申请号：US11144304
申请日：2005-06-03
CPC分类号： H01L27/14643 , H01L27/14601 , H01L29/66659 , H01L31/035281
摘要： A pixel including a substrate of a first conductivity type, a photodetector of a second conductivity type that is opposite the first conductivity type and configured to convert incident light to a charge, a floating diffusion of the second conductivity, and a transfer region between the photodetector and floating diffusion. A gate is formed above the transfer region and partially overlaps the photodetector and is configured to transfer charge from the photodetector to the floating diffusion. A pinning layer of the first conductivity type extends at least across the photodetector from the gate. A channel region of the first conductivity type extends generally from a midpoint of the gate at least across the photodiode and is formed by an implant of a dopant of the first conductivity and having a concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than proximate to the floating diffusion.
摘要翻译： 包括第一导电类型的衬底的像素，与第一导电类型相反并被配置为将入射光转换成电荷的第二导电类型的光电检测器，第二导电率的浮动扩散以及光电检测器 和浮动扩散。 栅极形成在传输区域的上方，并且部分地与光电检测器重叠，并且被配置为将电荷从光电检测器转移到浮动扩散。 第一导电类型的钉扎层至少跨过光电检测器从栅极延伸。 第一导电类型的沟道区域至少跨越光电二极管从栅极的中点大致延伸并且由第一导电性的掺杂剂的注入形成，并且具有使得转移区域的掺杂剂浓度更大的浓度 到光电探测器，而不是靠近浮动扩散。
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公开(公告)号：US07557397B2
公开(公告)日：2009-07-07
申请号：US11707848
申请日：2007-02-16
申请人： Chintamani P. Palsule , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
发明人： Chintamani P. Palsule , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
CPC分类号： H01L27/14643 , H01L27/14601 , H01L29/66659 , H01L31/035281
摘要： A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate. A channel implant of the first conductivity type extending from between a midpoint of the transfer gate and the floating diffusion to at least across the photodiode and having a dopant concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than the floating diffusion, and wherein a peak dopant concentration of the channel implant is at a level and at a depth below the surface such that a partially-buried channel is formed in the transfer region between the photodiode and floating diffusion when the transfer gate is energized.
摘要翻译： 包括具有第一导电类型并具有表面的衬底的像素，与第一导电类型相反的第二导电类型的光电检测器，第二导电类型的浮动扩散区域，光电检测器和浮动扩散区之间的传输区域 位于所述转印区域上方并且部分地与所述光电检测器重叠的栅极以及至少从所述栅极延伸穿过所述光电检测器的所述第一导电类型的钉扎层。 第一导电类型的沟道植入物从传输栅极的中点和浮动扩散延伸到至少跨越光电二极管并具有掺杂剂浓度，使得传输区域的掺杂剂浓度在接近光电检测器处比浮置 扩散，并且其中沟道注入的峰值掺杂剂浓度处于表面以下的水平和深度，使得当传输栅极通电时，在光电二极管和浮动扩散之间的传输区域中形成部分埋置的沟道。
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