公开(公告)号：US4531055A

公开(公告)日：1985-07-23

申请号：US455677

申请日：1983-01-05

申请人： Freeman D. Shepherd, Jr. ,  Paul W. Pellegrini ,  Charlotte E. Ludington ,  Melanie M. Weeks

发明人： Freeman D. Shepherd, Jr. ,  Paul W. Pellegrini ,  Charlotte E. Ludington ,  Melanie M. Weeks

IPC分类号： H01L27/146 ,  H01J40/14

CPC分类号： H01L27/14649

摘要： A two dimensional focal plane array of Schottky photodiodes on a silicon substrate for infrared imaging. The array is designed for mating with multiplexing circuitry and has a self-guarding feature wherein adjacent Schottky electrodes act as guard electrodes. This feature allows a substantial increase of the focal plane area coverage ratio.

摘要翻译： 用于红外成像的硅衬底上的肖特基光电二极管的二维焦平面阵列。 阵列设计用于与多路复用电路配合，并具有自我保护功能，其中相邻的肖特基电极用作保护电极。 该特征允许焦平面面积覆盖率的显着增加。

公开(公告)号：US4533933A

公开(公告)日：1985-08-06

申请号：US447599

申请日：1982-12-07

申请人： Paul W. Pellegrini ,  Charlotte E. Ludington ,  Aleksandar Golubovic ,  Melanie M. Weeks

发明人： Paul W. Pellegrini ,  Charlotte E. Ludington ,  Aleksandar Golubovic ,  Melanie M. Weeks

IPC分类号： H01L29/47 ,  H01L31/108 ,  H01L29/48

CPC分类号： H01L29/47 ,  H01L31/108

摘要： A Schottky barrier diode formed of iridium-silicon material having a frequency response encompassing the 3.0 to 5.0 micrometer infrared band. The bandwidth, uniformity of response and silicon base material of such diodes renders them ideally suited for use in large scale focal plane arrays associated with infrared cameras.

摘要翻译： 由铱硅材料形成的肖特基势垒二极管，其具有包含3.0至5.0微米红外波段的频率响应。 这种二极管的带宽，响应均匀性和硅基材料使其理想地适用于与红外相机相关联的大规模焦平面阵列。

公开(公告)号：US5163179A

公开(公告)日：1992-11-10

申请号：US808497

申请日：1991-12-17

申请人： Paul W. Pellegrini

发明人： Paul W. Pellegrini

IPC分类号： H01L31/036 ,  H01L31/108 ,  H01L31/18

CPC分类号： H01L31/108 ,  H01L31/036 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Platinum Silicide (PtSi) layers formed on silicon substrates are well known for their ability to image in the infrared portion of the electromagnetic spectrum out to 5.75 micrometers. The detectors are formed on p-type silicon substrates of orientation. This is the preferred crystal structure for silicon when used for fabrication of Very Large Scale Integration (VLSI). The cooling required for these devices is 77.degree. K., which is needed to reduce thermal currents in the diodes to be significantly below the infrared generated signal. Detector array operation at these temperatures does not allow for operation in space for extended missions because a closed cycle mechanical cooler must be used. We have developed a new PtSi detector which must be fabricated on p-type silicon having a crystal orientation. The detectors have been measured for their cutoff wavelength and barrier height is 0.310 eV which translates to a cutoff wavelength of 4.0 micrometers. The cooling required to operate these new devices is 110.degree. K. This means that they can be used in space applications where passive cooling is required.

摘要翻译： 在硅衬底上形成的铂硅化物（PtSi）层由于其在电磁光谱的红外部分中成像到5.75微米的能力而众所周知。 检测器形成在<100>取向的p型硅衬底上。 当用于制造超大规模集成（VLSI）时，这是硅的优选晶体结构。 这些器件所需的冷却是77°K，这是减少二极管中的热电流所需要的，明显低于红外线信号。 在这些温度下的检测器阵列操作不允许在空间中进行延长任务，因为必须使用闭环循环机械冷却器。 我们开发了一种新的PtSi检测器，它必须在具有<111>晶体取向的p型硅上制造。 已经测量了它们的截止波长的检测器，并且势垒高度为0.310eV，其转变为4.0微米的截止波长。 操作这些新设备所需的冷却是110°K.这意味着它们可以用于需要被动冷却的空间应用中。

公开(公告)号：US06211560B1

公开(公告)日：2001-04-03

申请号：US08496849

申请日：1995-06-16

申请人： Jorge R. Jimenez ,  Paul W. Pellegrini

发明人： Jorge R. Jimenez ,  Paul W. Pellegrini

IPC分类号： H01L3100

CPC分类号： H01L31/108

摘要： PtSi/Si Schottky diode infrared detectors are currently being used in large-area focal plane arrays for imaging in the 3-5 micron atmospheric transmission window. Their photoresponse cuts off at about 6 microns, beyond which they cannot detect infrared ratiation. Because of the nature of Schottky diodes, this cut-off wavelength cannot be adjusted during operation, but is relatively fixed, varying only in proportion of the fourth root of an externally applied bias. This disclosure describes a Schottky diode infrared detector with a voltage-tunable cut-off wavelength. The tunability is obtained by modification of the Schottky diode band diagram by insertion of a SiGe layer, with the appropriate parameters, between the silicide and the Si substrate, making the detector a silicide/SiGe/Si Schottky diode detector. The SiGe/Si interface has a valence band offset that can be used to engineer the shape, or depth profile, of the Schottky barrier. The energy offset can be gradual or abrupt, depending on the grading of the Ge concentration in the SiGe layer. When the offset is abrupt, it can be thought of as an additional, higher energy barrier to photoemitted carriers if the SiGe layer is thin enough. Because this offset, gradual or abrupt, is designed to be deeper in the semiconductor than the normal Schottky barrier maximum, it is easily modified by an external applied voltage. The sensitivity and the range of tunability are defined by the SiGe thickness and Ge concentration, respectively.

摘要翻译： PtSi / Si肖特基二极管红外探测器目前正用于大面积焦平面阵列，用于在3-5微米大气传播窗口进行成像。 它们的光响应在大约6微米处被切断，超过它们不能检测到红外光谱。 由于肖特基二极管的性质，该截止波长在操作过程中不能调整，而是相对固定，只有外部施加偏压的第四根根部的比例才会变化。 本公开描述了具有电压可调截止波长的肖特基二极管红外检测器。 通过在硅化物和Si衬底之间插入具有适当参数的SiGe层，使检测器成为硅化物/ SiGe / Si肖特基二极管检测器，可以通过修改肖特基二极管带图获得可调谐性。 SiGe / Si界面具有价带偏移，可用于工程化肖特基势垒的形状或深度分布。 能量偏移可以是逐渐的或突然的，这取决于SiGe层中Ge浓度的分级。 当偏移突变时，如果SiGe层足够薄，则可以将其视为对光电载体的另外更高的能量势垒。 由于这种偏移，渐进或突变被设计为在半导体中比正常肖特基势垒最大值更深，所以容易被外部施加的电压修改。 灵敏度和可调性范围分别由SiGe厚度和Ge浓度定义。