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公开(公告)号:USH134H
公开(公告)日:1986-09-02
申请号:US643139
申请日:1984-08-22
IPC分类号: H01L29/872 , H01L31/0232 , H01L31/101 , H01L31/108
CPC分类号: H01L31/108 , H01L29/872 , H01L31/101 , H01L31/1872 , Y02E10/50 , Y02P70/521
摘要: A Schottky barrier device having a completely submersed Schottky barrier junction to enhance the collection efficiency of photogenerated carriers. A method is also disclosed for manufacturing the device.
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公开(公告)号:US4016416A
公开(公告)日:1977-04-05
申请号:US669584
申请日:1976-03-23
IPC分类号: G01J1/04 , H01L31/0232 , H01J39/12
CPC分类号: H01L31/0232 , G01J1/04 , G01J1/0407 , G01J1/0414 , G01J1/0209 , G01J3/021
摘要: A radiation transparent base having a number of coincentric Fresnel rings mounted on one face, and one-quarter wavelength in thickness and a reflective coating covering the face and rings and a detector mounted on the opposite face to collect reflected in phase radiation.
摘要翻译: 辐射透明基底,其具有安装在一个面上的多个同心式菲涅尔环,厚度为四分之一波长,以及覆盖该表面和环的反射涂层以及安装在相对面上的检测器以收集反射的相位辐射。
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公开(公告)号:US4531055A
公开(公告)日:1985-07-23
申请号:US455677
申请日:1983-01-05
IPC分类号: H01L27/146 , H01J40/14
CPC分类号: H01L27/14649
摘要: A two dimensional focal plane array of Schottky photodiodes on a silicon substrate for infrared imaging. The array is designed for mating with multiplexing circuitry and has a self-guarding feature wherein adjacent Schottky electrodes act as guard electrodes. This feature allows a substantial increase of the focal plane area coverage ratio.
摘要翻译: 用于红外成像的硅衬底上的肖特基光电二极管的二维焦平面阵列。 阵列设计用于与多路复用电路配合,并具有自我保护功能,其中相邻的肖特基电极用作保护电极。 该特征允许焦平面面积覆盖率的显着增加。
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公开(公告)号:US4005327A
公开(公告)日:1977-01-25
申请号:US625799
申请日:1975-10-28
CPC分类号: H01J29/455
摘要: A solid state sensing retina for infrared vidicon television camera tubes using a low voltage electron beam, consisting of a monolithic silicon wafer having an n-type substrate and two dimensional array of p-type islands, each island has a Schottky electrode photoemitter and substrate contact buss, an ohmic contact pad allows charging of the p-type region beneath the Schottky electrode.
摘要翻译: 一种用于使用低电压电子束的红外摄像机电视摄像机管的固态感测视网膜,由具有n型衬底和二维阵列的p型岛的单片硅晶片组成,每个岛具有肖特基电极光电发射器和衬底接触 总线,欧姆接触焊盘允许对肖特基电极下方的p型区域充电。
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