公开(公告)号：US09276101B2

公开(公告)日：2016-03-01

申请号：US14752066

申请日：2015-06-26

Applicant: Freescale Semiconductor, Inc.

Inventor： Bruce M. Green ,  Karen E. Moore ,  Olin Hartin

IPC: H01L29/15 ,  H01L29/778 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/20 ,  H01L27/06 ,  H01L49/02 ,  H01L29/47

CPC classification number: H01L29/7787 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/475 ,  H01L29/66462

Abstract: A low leakage current switch device (110) is provided which includes a GaN-on-Si substrate (11-43) covered by a passivation surface layer (43) in which a T-gate electrode with sidewall extensions (48) is formed and coated with a conformal passivation layer (49) so that the T-gate electrode sidewall extensions are spaced apart from the underlying passivation surface layer (43) by the conformal passivation layer (49).

Abstract translation: 提供了一种低泄漏电流开关装置（110），其包括由钝化表面层（43）覆盖的GaN-Si衬底（11-43），其中形成具有侧壁延伸部（48）的T形栅电极， 涂覆有共形钝化层（49），使得T栅极电极侧壁延伸部通过共形钝化层（49）与下面的钝化表面层（43）间隔开。

公开(公告)号：US20150295075A1

公开(公告)日：2015-10-15

申请号：US14752066

申请日：2015-06-26

Applicant: Freescale Semiconductor, Inc.

Inventor： Bruce M. Green ,  Karen E. Moore ,  Olin Hartin

IPC: H01L29/778 ,  H01L29/47 ,  H01L27/06 ,  H01L49/02 ,  H01L29/20 ,  H01L29/423

CPC classification number: H01L29/7787 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/475 ,  H01L29/66462

Abstract: A low leakage current switch device (110) is provided which includes a GaN-on-Si substrate (11-43) covered by a passivation surface layer (43) in which a T-gate electrode with sidewall extensions (48) is formed and coated with a conformal passivation layer (49) so that the T-gate electrode sidewall extensions are spaced apart from the underlying passivation surface layer (43) by the conformal passivation layer (49).

Abstract translation: 提供了一种低泄漏电流开关装置（110），其包括由钝化表面层（43）覆盖的GaN-Si衬底（11-43），其中形成具有侧壁延伸部（48）的T形栅电极， 涂覆有共形钝化层（49），使得T栅极电极侧壁延伸部通过共形钝化层（49）与下面的钝化表面层（43）间隔开。