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1.发明申请METHOD OF FORMING FULLY SILICIDED NMOS AND PMOS SEMICONDUCTOR DEVICES HAVING INDEPENDENT POLYSILICON GATE THICKNESSES, AND RELATED DEVICE 有权形成具有独立多晶硅栅厚度的完全硅化的NMOS和PMOS半导体器件的方法及相关器件公开(公告)号：US20090057776A1
公开(公告)日：2009-03-05
申请号：US11741551
申请日：2007-04-27
IPC分类号： H01L27/092 , H01L21/28
CPC分类号： H01L21/823835 , H01L21/28097 , H01L21/823842 , H01L29/4975 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要： A method of forming fully silicided NMOS and PMOS semiconductor devices having independent polysilicon gate thicknesses, and related device. At least some of the illustrative embodiments are methods comprising forming an N-type gate over a semiconductor substrate (the N-type gate having a first thickness), forming a P-type gate over the semiconductor substrate (the P-type gate having a second thickness different than the first thickness), and performing a simultaneous silicidation of the N-type gate and the P-type gate.
摘要翻译： 一种形成具有独立多晶硅栅极厚度的完全硅化的NMOS和PMOS半导体器件的方法及相关器件。 至少一些说明性实施例是包括在半导体衬底（具有第一厚度的N型栅极）上形成N型栅极的方法，在半导体衬底上形成P型栅极（P型栅极具有 第二厚度不同于第一厚度），并且执行N型栅极和P型栅极的同时硅化。
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2.发明授权Method of forming fully silicided NMOS and PMOS semiconductor devices having independent polysilicon gate thicknesses, and related device 有权形成具有独立多晶硅栅极厚度的完全硅化的NMOS和PMOS半导体器件的方法及相关器件公开(公告)号：US08574980B2
公开(公告)日：2013-11-05
申请号：US11741551
申请日：2007-04-27
IPC分类号： H01L21/8238
CPC分类号： H01L21/823835 , H01L21/28097 , H01L21/823842 , H01L29/4975 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要： A method of forming fully silicided NMOS and PMOS semiconductor devices having independent polysilicon gate thicknesses, and related device. At least some of the illustrative embodiments are methods comprising forming an N-type gate over a semiconductor substrate (the N-type gate having a first thickness), forming a P-type gate over the semiconductor substrate (the P-type gate having a second thickness different than the first thickness), and performing a simultaneous silicidation of the N-type gate and the P-type gate.
摘要翻译： 一种形成具有独立多晶硅栅极厚度的完全硅化的NMOS和PMOS半导体器件的方法及相关器件。 至少一些说明性实施例是包括在半导体衬底（具有第一厚度的N型栅极）上形成N型栅极的方法，在半导体衬底上形成P型栅极（P型栅极具有 第二厚度不同于第一厚度），并且执行N型栅极和P型栅极的同时硅化。
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3.发明申请Method of Forming Fully Silicided NMOS and PMOS Semiconductor Devices Having Independent Polysilicon Gate Thicknesses, and Related Device 审中-公开形成具有独立多晶硅栅极厚度的完全硅化NMOS和PMOS半导体器件的方法及相关器件公开(公告)号：US20090321846A1
公开(公告)日：2009-12-31
申请号：US12555027
申请日：2009-09-08
IPC分类号： H01L27/092
CPC分类号： H01L21/823835 , H01L21/28097 , H01L21/823842 , H01L29/4975 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要： A method of forming fully silicided NMOS and PMOS semiconductor devices having independent polysilicon gate thicknesses, and related device. At least some of the illustrative embodiments are methods comprising forming an N-type gate over a semiconductor substrate (the N-type gate having a first thickness), forming a P-type gate over the semiconductor substrate (the P-type gate having a second thickness different than the first thickness), and performing a simultaneous silicidation of the N-type gate and the P-type gate.
摘要翻译： 一种形成具有独立多晶硅栅极厚度的完全硅化的NMOS和PMOS半导体器件的方法及相关器件。 至少一些说明性实施例是包括在半导体衬底（具有第一厚度的N型栅极）上形成N型栅极的方法，在半导体衬底上形成P型栅极（P型栅极具有 第二厚度不同于第一厚度），并且执行N型栅极和P型栅极的同时硅化。
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