公开(公告)号：US20120170363A1

公开(公告)日：2012-07-05

申请号：US12981857

申请日：2010-12-30

申请人： Fu Kai Tsai ,  Liu Chien Hung

发明人： Fu Kai Tsai ,  Liu Chien Hung

IPC分类号： G11C16/10

CPC分类号： G11C16/3454 ,  G11C16/0408 ,  G11C16/10

摘要： A method of programming a memory device comprising a plurality of bits that each have a plurality of program states in which each program state has a corresponding program verify (PV) level may include applying a first sequence of program shots to program fastest bits of the memory device utilizing a bias voltage having a maximum value corresponding to a respective program state being programmed, lowering the bias voltage to apply a second sequence of program shots to program fast bits of the memory device up to N program shots, and increasing the bias voltage for program shots greater than N to program slow bits of the memory device.

摘要翻译： 一种编程存储器件的方法，包括多个位，每个位具有多个程序状态，其中每个程序状态具有相应的程序验证（PV）级别，可包括应用程序镜头的第一序列来编程存储器的最快位 利用具有对应于被编程的相应编程状态的最大值的偏置电压的装置，降低偏置电压以施加第二序列的程序镜头，以编程存储器件的快速位，直到N个程序镜头，并且增加偏置电压 大于N的程序镜头可以对存储器件的慢位进行编程。