公开(公告)号：US20010009279A1

公开(公告)日：2001-07-26

申请号：US09764114

申请日：2001-01-19

申请人： Fujitsu Limited, Kawasaki, Japan

发明人： Toshihide Kikkawa

IPC分类号： H01L029/06 ,  H01L031/0256 ,  H01L031/0328 ,  H01L031/0336 ,  H01L031/072

CPC分类号： H01L29/66318 ,  H01L21/28587 ,  H01L29/66462 ,  H01L29/7371 ,  H01L29/7782

摘要： A semiconductor device is a hetero-junction bipolar transistor structured by having a gallium arsenide film among laminated films, which has an indium gallium phosphide (InGaP) film which is connected to the gallium arsenide film and functions as an emitter, wherein the indium gallium phosphide film includes antimony (Sb). By including antimony, a carrier density can be deterred from decreasing near an interface between the gallium arsenide film and the indium gallium phosphide film and an emitter resistance can be reduced to a minimum.

摘要翻译： 半导体器件是通过在层叠膜中具有砷化镓膜构成的异质结双极晶体管，其具有连接到砷化镓膜并用作发射极的铟镓磷（InGaP）膜，其中磷化铟镓 薄膜包括锑（Sb）。 通过包括锑，可以防止载流子密度在砷化镓膜和磷酸铟镓膜之间的界面附近降低，并且可以将发射极电阻降低到最小。