公开(公告)号：US4472688A

公开(公告)日：1984-09-18

申请号：US386622

申请日：1982-06-09

申请人： Funada Saburo ,  Tatsuhiko Okuma ,  Kazumasa Sakai

发明人： Funada Saburo ,  Tatsuhiko Okuma ,  Kazumasa Sakai

IPC分类号： H03F1/02 ,  H03F3/04 ,  H03F3/26

CPC分类号： H03F1/0244

摘要： A voltage switching amplifier circuit has a comparator which, after comparing signal amplitude to a comparison voltage, switches on a high voltage or low voltage amplifier depending upon whether the comparison voltage is exceeded or not. After the predetermined comparison voltage is exceeded, a positive feedback circuit reduces the comparison voltage enabling the high voltage amplifier to continue operation at least until the signal amplitude drops below the reduced comparison voltage. In a preferred embodiment, a time constant circuit maintains the high voltage amplifier in operation for a predetermined period of time during which the signal amplitude has dropped below and remained below the reduced comparison voltage.

摘要翻译： 电压开关放大器电路具有比较器，其在将信号幅度与比较电压进行比较之后，根据是否超过比较电压来接通高压或低压放大器。 在超过预定比较电压之后，正反馈电路减小比较电压，使得高电压放大器至少直到信号幅度降低到降低的比较电压以下来继续工作。 在优选实施例中，时间常数电路将高电压放大器保持工作在预定的时间段内，在该预定时间段期间，信号幅度已经降到低于并且保持低于降低的比较电压。

公开(公告)号：US4158179A

公开(公告)日：1979-06-12

申请号：US788993

申请日：1977-04-19

申请人： Kazumasa Sakai ,  Tatsuhiko Okuma

发明人： Kazumasa Sakai ,  Tatsuhiko Okuma

IPC分类号： H03F1/02 ,  H03F3/72 ,  H03G3/30 ,  H03F3/04

CPC分类号： H03F3/72 ,  H03F1/0244 ,  H03G3/3026

摘要： An amplifier circuit having an input adapted to receive a signal to be amplified from a signal source, at least two sets of combined amplifying transistors and associated power sources for the amplifying transistors, the two sets constituting first and second amplifying stages, a switching transistor for automatically switching the amplifying operation of the amplifier circuit from the first amplifying stage to the second amplifying stage depending upon the amplitude of the input signal to the amplifier and a load to which the amplifying transistors are connected in parallel.

摘要翻译： 一种放大器电路，具有适于从信号源接收要被放大的信号的输入端，用于放大晶体管的至少两组组合放大晶体管和相关联的功率源，所述两组构成第一和第二放大级;开关晶体管， 根据到放大器的输入信号的幅度和放大晶体管并联连接的负载，自动地将放大器电路的放大操作从第一放大级切换到第二放大级。

公开(公告)号：US4199732A

公开(公告)日：1980-04-22

申请号：US911079

申请日：1978-05-31

申请人： Tatsuhiko Okuma

发明人： Tatsuhiko Okuma

IPC分类号： H03F1/48 ,  H03F3/18 ,  H03F3/30

CPC分类号： H03F1/48 ,  H03F3/3071

摘要： An amplifying circuit comprising an input terminal to which an alternating current signal is applied; a first transistor; a second transistor where one of the first and second transistors is a NPN transistor and the other is a PNP transistor; an output terminal to which is connected the respective collectors of the first and second transistors means for operating the second transistor as a constant current source; and connecting means for connecting the alternating current signal at the input terminal to the respective bases of the first and second transistors where the connecting means includes a capacitor connected between the input terminal and the base of the second transistor to thereby connect to the second transistor substantially only those frequencies of the alternating current signal which are at least as high as the cut-off frequency of the first transistor although frequencies below the cut-off frequency may also be coupled to the second transistor in a further embodiment of this invention.

摘要翻译： 一种放大电路，包括施加有交流信号的输入端子; 第一晶体管; 第二晶体管，其中第一和第二晶体管中的一个是NPN晶体管，另一个是PNP晶体管; 连接到第一和第二晶体管的各个集电极的输出端子用于将第二晶体管用作恒定电流源; 以及用于将输入端子处的交流信号连接到第一和第二晶体管的各个基极的连接装置，其中连接装置包括连接在第二晶体管的输入端子和基极之间的电容器，从而基本上连接到第二晶体管 在本发明的另一实施例中，只有交流信号的那些频率至少与第一晶体管的截止频率一样高，尽管低于截止频率的频率也可以耦合到第二晶体管。

公开(公告)号：US6054898A

公开(公告)日：2000-04-25

申请号：US859710

申请日：1997-05-21

申请人： Tatsuhiko Okuma ,  Akira Miyamoto ,  Hachiro Sato

发明人： Tatsuhiko Okuma ,  Akira Miyamoto ,  Hachiro Sato

IPC分类号： H03F3/30 ,  H03F3/26

CPC分类号： H03F3/3077

摘要： A semiconductor device capable of maintaining good temperature compensation and reducing manufacture costs of SEPP connecting NPN and PNP power transistors and temperature compensating and biasing circuits. A first semiconductor device has an ordinary bias diode formed on the same semiconductor substrate as an NPN power transistor. A second semiconductor device has one or a plurality of Schottky barrier type diodes formed on the same semiconductor substrate as a PNP power transistor. The forward voltage drop V.sub.1 of the diode is set to an arbitrary constant value smaller than E exclusive of about E/2, and the total forward voltage drop V.sub.2 of the Schottky barrier diode or diodes is set to a predetermined value of about (E-V.sub.1), where E is a total forward voltage drop between the bases and emitters of the NPN and PNP power transistors.

摘要翻译： 能够保持良好的温度补偿并降低SEPP连接NPN和PNP功率晶体管以及温度补偿和偏置电路的制造成本的半导体器件。 第一半导体器件具有形成在与NPN功率晶体管相同的半导体衬底上的普通偏置二极管。 第二半导体器件具有形成在与PNP功率晶体管相同的半导体衬底上的一个或多个肖特基势垒型二极管。 将二极管的正向压降V1设定为小于除E / 2以外的E的任意常数值，将肖特基势垒二极管或二极管的正向压降V2设定为约（E- V1），其中E是NPN和PNP功率晶体管的基极和发射极之间的总正向压降。