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    Vertical PN silicon modulator
    3.
    发明授权
    Vertical PN silicon modulator 有权
    垂直PN硅调制器

    公开(公告)号：US09523870B2

    公开(公告)日：2016-12-20

    申请号：US14680823

    申请日：2015-04-07

    Applicant: Futurewei Technologies, Inc.

    Inventor： Hongzhen Wei ,  Li Yang ,  Qianfan Xu ,  Xiao Shen

    IPC: G02F1/035 ,  G02F1/025 ,  H01L21/225 ,  H01L21/3215 ,  H01L21/306 ,  G02F1/015

    CPC classification number: G02F1/025 ,  G02F2001/0151 ,  G02F2001/0152 ,  H01L21/2253 ,  H01L21/30604 ,  H01L21/3215

    Abstract: A silicon waveguide comprising a waveguide core that comprises a first positively doped (P1) region vertically adjacent to a second positively doped (P2) region. The P2 region is more heavily positively doped than the P1 region. A first negatively doped (N1) region is vertically adjacent to a second negatively doped (N2) region. The N2 region is more heavily negatively doped than the N1 region. The N2 region and the P2 region are positioned vertically adjacent to form a positive-negative (PN) junction. The N1 region, the N2 region, the P1 region, and the P2 region are positioned as a vertical PN junction and configured to completely deplete the P2 region of positive ions and completely deplete the N2 region of negative ions when a voltage drop is applied across the N1 region, the N2 region, the P1 region, and the P2 region.

    Abstract translation: 一种硅波导，包括波导芯，该波导芯包括与第二正掺杂（P2）区垂直相邻的第一正掺杂（P1）区。 P2区域比P1区域更重的正掺杂。 第一负掺杂（N1）区域与第二负掺杂（N2）区域垂直相邻。 N2区域比N1区域负掺杂。 N2区域和P2区域垂直相邻地形成正负（PN）结。 N1区域，N2区域，P1区域和P2区域被定位为垂直PN结，并且被配置为当施加电压降时，完全耗尽正离子的P2区域并且完全耗尽负离子的N 2区域 N1区域，N2区域，P1区域和P2区域。

    Silicon waveguide having polarization insensitive and temperature insensitive phase delay
    4.
    发明授权
    Silicon waveguide having polarization insensitive and temperature insensitive phase delay 有权
    硅波导具有偏振不敏感和温度不敏感的相位延迟

    公开(公告)号：US09429710B2

    公开(公告)日：2016-08-30

    申请号：US14528994

    申请日：2014-10-30

    Applicant: Futurewei Technologies, Inc.

    Inventor： Hongzhen Wei ,  Xiao Andy Shen

    IPC: G02B6/00 ,  G02B6/293

    CPC classification number: G02B6/29302 ,  G02B6/2935 ,  G02B6/29353 ,  G02B6/29397 ,  G02B6/29398

    Abstract: An apparatus includes a first waveguide configured to receive an input signal. A section of the first waveguide has a length between a first initial point and a first end point. A first polarization rotator is located within the section at a first distance from the first initial point of the section of the first waveguide. A section of a second waveguide is configured to receive the input signal, and has the same length between the second initial point and a second end point. A second polarization rotator is located within the section of the second waveguide at a second distance from the second initial point of the section of the second waveguide. More particularly, a relative distance between the first distance and the second distance is configured to achieve a desired phase delay of an output signal from the first waveguide and an output signal from the second waveguide.

    Abstract translation: 一种装置包括配置成接收输入信号的第一波导。 第一波导的一部分具有在第一初始点和第一端点之间的长度。 第一偏振旋转器位于与第一波导的部分的第一初始点相距第一距离的部分内。 第二波导的一部分被配置为接收输入信号，并且在第二初始点和第二终点之间具有相同的长度。 第二偏振旋转器位于距第二波导部分的第二初始点第二距离处的第二波导的部分内。 更具体地，第一距离和第二距离之间的相对距离被配置为实现来自第一波导的输出信号和来自第二波导的输出信号的期望的相位延迟。

    Polarization insensitive micro ring modulator
    6.
    发明授权
    Polarization insensitive micro ring modulator 有权

    公开(公告)号：US10330959B2

    公开(公告)日：2019-06-25

    申请号：US15601706

    申请日：2017-05-22

    Applicant: Futurewei Technologies, Inc.

    Inventor： Yangjing Wen ,  Yu Sheng Bai ,  Hongzhen Wei

    IPC: G02F1/01 ,  G02B6/293

    Abstract: A transmission-type polarization insensitive modulator implemented as a polarization insensitive micro ring modulator (PIMRM) includes a first polarization splitter-rotator (PSR) configured to generate a first light beam and a second light beam having a common polarization from an input, a micro ring configured to modulate the first light beam with data to generate a first output signal, and modulate the second light beam with data to generate a second output signal, and a second PSR configured to combine the first output signal and the second output signal to form a modulated output signal, wherein the micro ring is disposed in between the first PSR and the second PSR.

    Vertical PN Silicon Modulator
    7.
    发明申请
    Vertical PN Silicon Modulator 有权
    垂直PN硅调制器

    公开(公告)号：US20160299363A1

    公开(公告)日：2016-10-13

    申请号：US14680823

    申请日：2015-04-07

    Applicant: Futurewei Technologies, Inc.

    Inventor： Hongzhen Wei ,  Li Yang ,  Qianfan Xu ,  Xiao Shen

    IPC: G02F1/025 ,  H01L21/3215 ,  H01L21/306 ,  H01L21/225

    CPC classification number: G02F1/025 ,  G02F2001/0151 ,  G02F2001/0152 ,  H01L21/2253 ,  H01L21/30604 ,  H01L21/3215

    Abstract: A silicon waveguide comprising a waveguide core that comprises a first positively doped (P1) region vertically adjacent to a second positively doped (P2) region. The P2 region is more heavily positively doped than the P1 region. A first negatively doped (N1) region is vertically adjacent to a second negatively doped (N2) region. The N2 region is more heavily negatively doped than the N1 region. The N2 region and the P2 region are positioned vertically adjacent to form a positive-negative (PN) junction. The N1 region, the N2 region, the P1 region, and the P2 region are positioned as a vertical PN junction and configured to completely deplete the P2 region of positive ions and completely deplete the N2 region of negative ions when a voltage drop is applied across the N1 region, the N2 region, the P1 region, and the P2 region.

    Abstract translation: 一种硅波导，包括波导芯，该波导芯包括与第二正掺杂（P2）区垂直相邻的第一正掺杂（P1）区。 P2区域比P1区域更重的正掺杂。 第一负掺杂（N1）区域与第二负掺杂（N2）区域垂直相邻。 N2区域比N1区域负掺杂。 N2区域和P2区域垂直相邻地形成正负（PN）结。 N1区域，N2区域，P1区域和P2区域被定位为垂直PN结，并且被配置为当施加电压降时，完全耗尽正离子的P2区域并且完全耗尽负离子的N 2区域 N1区域，N2区域，P1区域和P2区域。

    Edge Coupling Device Fabrication
    8.
    发明申请
    Edge Coupling Device Fabrication 有权
    边缘耦合器件制造

    公开(公告)号：US20150293303A1

    公开(公告)日：2015-10-15

    申请号：US14680917

    申请日：2015-04-07

    Applicant: Futurewei Technologies, Inc.

    Inventor： Huapu Pan ,  Zongrong Liu ,  Hongzhen Wei ,  Hongmin Chen

    IPC: G02B6/136 ,  G02B6/122 ,  G02B6/132 ,  G02B6/12

    CPC classification number: G02B6/136 ,  G02B6/1223 ,  G02B6/132 ,  G02B6/305 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12195

    Abstract: A method of fabricating an edge coupling device and an edge coupling device are provided. The method includes removing a portion of cladding material to form a trench over an inversely tapered silicon waveguide, depositing a material having a refractive index greater than silicon dioxide over remaining portions of the cladding material and in the trench, and removing a portion of the material within the trench to form a ridge waveguide.

    Abstract translation: 提供一种制造边缘耦合装置和边缘耦合装置的方法。 该方法包括去除包层材料的一部分以在反锥形硅波导上形成沟槽，在包层材料的剩余部分和沟槽中沉积具有大于二氧化硅的折射率的材料，并且去除材料的一部分 在沟槽内形成脊形波导。

    Wavelength-division multiplexed polarization-insensitive transmissive modulator
    9.
    发明授权
    Wavelength-division multiplexed polarization-insensitive transmissive modulator 有权

    公开(公告)号：US10243684B2

    公开(公告)日：2019-03-26

    申请号：US15602909

    申请日：2017-05-23

    Applicant: Futurewei Technologies, Inc.

    Inventor： Yangjing Wen ,  Yu Sheng Bai ,  Hongzhen Wei

    IPC: H04B10/516 ,  H04J14/06 ,  H04J14/02 ,  G02B6/293

    Abstract: A wavelength-division multiplexed (WDM) polarization-independent transmissive modulator (PITM) that receives a multi-wavelength continuous wave (CW) light of indeterminate polarization, splits the multi-wavelength CW light into two transverse electric (TE) polarized components, demultiplexer the polarized components into single-wavelength CW lights, modulates the single-wavelength CW lights using four-port cross-state or bypass-state modulators, multiplexes the modulated output of the four-port modulators (FPM) into two polarized modulated components, and combines the two polarized modulated components into a multi-wavelength modulated output signal.

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