公开(公告)号：US20170179708A1

公开(公告)日：2017-06-22

申请号：US14971208

申请日：2015-12-16

Applicant: GE Energy Power Conversion Technology Ltd

Inventor： David Everett FRYE ,  Philip Edgar Crapse STONE ,  Daniel Francis OPILA ,  Robert Gregory WAGONER ,  Siddharth PANT ,  Shrutish DAWANDE

IPC: H02H3/16 ,  G01R31/02

CPC classification number: H02H3/16 ,  G01R31/02 ,  G01R31/025 ,  G01R31/026 ,  H02H3/06 ,  H02H7/1222 ,  H02H7/20 ,  Y02E10/56

Abstract: Provided is a fault isolation apparatus for an inverter configured for coupling to an external power supply. The apparatus includes a plurality of fault detection devices, each configured to (i) complete an electrical path between the inverter and the external power supply and (ii) detect a fault along its respective electrical path. The apparatus also includes a controller configured to instruct the fault detection device to complete its respective electrical path only when the path is devoid of the detected fault.

公开(公告)号：US20170133946A1

公开(公告)日：2017-05-11

申请号：US14933004

申请日：2015-11-05

Applicant: GE Energy Power Conversion Technology Ltd

Inventor： Robert Gregory Wagoner ,  Cheng LUO ,  Siddharth PANT

IPC: H02M7/537 ,  H02M1/42

CPC classification number: H02M7/537 ,  H02M1/42 ,  H02M1/4216 ,  H02M7/487 ,  H02M7/5395 ,  H02M2001/327 ,  Y02B70/126

Abstract: Provided is a method for controlling operation of semiconductor gates in a power conversion system including one or more multilevel inverters coupleable to a modulator and a controller. The method includes generating, via the controller, a control signal responsive to an output current power factor associated with the inverters and producing a discontinuous pulse width modulation reference signal based upon the control signal and a target output power, the discontinuous pulse width modulation reference signal being indicative of shifting a phase angle between current and voltage. A gating signal is generated for output from the modulator, as a function of the reference signal and a carrier waveform. The gating signal adjusts the phase angle to prevent switching of the semiconductor gates.