公开(公告)号：US3748174A

公开(公告)日：1973-07-24

申请号：US3748174D

申请日：1971-08-06

申请人： GEN ELECTRIC

发明人： CHEN A ,  LOMMEL J

IPC分类号： C23C14/20 ,  G01K7/18 ,  H01C1/034 ,  H01C7/02 ,  G01K7/22

CPC分类号： H01C1/034 ,  C23C14/20 ,  G01K7/183 ,  H01C7/021 ,  Y10S428/913 ,  Y10T29/49085 ,  Y10T428/265 ,  Y10T428/3154 ,  Y10T428/31681

摘要： THIN FILM NICKEL TEMPERATURE SENSORS HAVING A TEMPERATURE COEFFICIENT OF RESISTANCE OF ABOUT +0.2%/*C. AND A RESISTANCE ABOVE 0.35 OHM PER SQUARE ARE FORMED BY ELECTRON BEAM EVAPORATION OF A HIGH PURITY NICKEL SOURCE AT PRESSURE BELOW 8X10-6 TORR AND DEPOSITION OF THE EVAPORATED NICKEL ATOP A DIELECTRIC SUBSTRATE, E.G. A POLYIMIDE FILM, HEATED ABOVE 60*C. THE NICKEL FILM PREFERABLY IS DEPOSITED TO A THICKNESS BETWEEN 250 A. AND 3000 A. AND MASKING IS EMPOLYED TO PRODUCE A DESIRED CONFIGURATION IN THE DEPOSITED NICKEL FILM. TO STABILIZE THE RESISTANCE OF THE DEPOSITED NICKEL FILM, A DIELECTRIC ENCAPSULANT SUCH AS ALUMINA, SILICA, A POLYIMIDE OR A FLUOROCARBON THEN IS OVERLAYED UPON THE FILM BY CONVENTIONAL VACUUM DEPOSITION OR BONDING TECHNIQUES.

公开(公告)号：US3741823A

公开(公告)日：1973-06-26

申请号：US3741823D

申请日：1970-10-26

申请人： GEN ELECTRIC

发明人： LOMMEL J

IPC分类号： G11B13/04 ,  H01F10/32 ,  H01F1/02

CPC分类号： B82Y25/00 ,  G11B13/045 ,  H01F10/002 ,  H01F10/325

摘要： THIN FILMS OF ION-RHODIUM EXHIBITING A BROADLY HYSTERIC FIRST ORDER TRANSISTION BETWEEN THE FERROMAGNETIC AND ANTIFERROMAGNETIC STATES ARE PRODUCED BY SEQUENTIALLY DEPOSITING IRON AND RHODIUM FILMS UPON A REFRACTORY SUBSTRATE AT A PRESSURE IN THE RANGE OF 1X10**-6 TORR, ANNEALING THE STRUCTURE IN A VACUUM OF 1X10**-6 TORR AT A TEMPERATURE OF APPROXIMATELY 700* C. FOR 1 HOUR TO PRODUCE A COMPLETE DIFFUSION OF THE IRON AND RHODIUM LAYERS, AND SUBSEQUENTLY SUBJECTING THE DIFFUSED LAYERS TO A SECOND ANNEAL IN AN ATMOSPHERE GREATER THAN 10 PARTS PER MILLION OXYGEN IN A THERMAL CYCLE THAT INCLUDES SLOWLY HEATING THE STRUCTURE TO 400* C., MAINTAINING THE 400* C. FOR APPROXIMATELY 10 MINUTES AND SLOWLY COOLING TO ROOM TEMPERATURE. FILMS THUS FORMED ARE ADVANTAGEOUSLY EMPOLYED IN THE RECORDING OF DIGITAL INFORMATION BY ELECTRON BEAM HEATING INDIVIDUAL REGIONS THROUGH A FIRST ORDER TRANSISTION TO THE FERROMAGNETIC STATE WHEREUPON THE REGIONS ARE PERMITTED TO COOL TO A BIASING TEMPERATURE SLIGHTLY HIGHER THAN THE TEMPERATURE OF TRANSISTION BACK TO AN ANTIFEROMAGNETIC STATE. A MAGNETIC FIELD THEN IS APPLIED TO THE ENTIRE FILM TO MAGNETIZE ONLY THOSE REGIONS OF THE FILM IN THE FERROMAGNETIC STATE AND READOUT OF THE RECORDED INFORMATION CAN BE ACHIEVED BY CONVENTIONAL ELECTRON BEAM MICROSCOPY. THE FERROMAGNETISM OF THE FILM SUBSEQUENTLY CAN BE ERASED BY COOLING THE FILM BELOW THE TRANSISTION TEMPERATURE TO THE ANTIFERROMAGNETIC STATE OR BY THE APPLICATION OF A STRAIN TO THE FILM.