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公开(公告)号：US09718700B2
公开(公告)日：2017-08-01
申请号：US14629178
申请日：2015-02-23
发明人： Christian Binek , Peter Dowben , Kirill Belashchenko , Aleksander Wysocki , Sai Mu , Mike Street
CPC分类号： C01G37/027 , C01P2002/50 , C01P2002/72 , H01F1/0009 , H01F10/002 , H01F10/3268 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetoelectric composition of boron and chromia is provided. The boron and chromia alloy can contain boron doping of 1%-10% in place of the oxygen in the chromia. The boron-doped chromia exhibits an increased critical temperature while maintaining magnetoelectric characteristics. The composition can be fabricated by depositing chromia in the presence of borane. The boron substitutes oxygen in the chromia, enhancing the exchange energy and thereby increasing Néel temperature.
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公开(公告)号：US09577180B2
公开(公告)日：2017-02-21
申请号：US14608348
申请日：2015-01-29
申请人： International Business Machines Corporation , The Board of Trustees of the University of Alabama
CPC分类号： H01L43/02 , H01F10/002 , H01L43/08 , H01L43/10 , H01L43/12 , H03K19/168
摘要： A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion.
摘要翻译： 磁逻辑单元包括第一电极部分，布置在第一电极上的磁性部分，磁性部分包括反铁磁材料或铁磁材料，布置在磁性部分上的电介质部分和布置在磁性部分上的第二电极部分 电介质部分。
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3.发明申请Data storage medium with laterally magnetised pad and method for making same 失效具有横向磁化垫的数据存储介质及其制造方法公开(公告)号：US20040151947A1
公开(公告)日：2004-08-05
申请号：US10482465
申请日：2003-12-31
发明人： Bernard Rodmacq , Stephane Landis , Bernard Dieny
IPC分类号： G11B005/66
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/09 , G11B5/74 , G11B5/743 , G11B5/82 , G11B5/855 , G11C11/14 , H01F10/002 , H01F10/3218 , H01F10/3286 , H01F41/308
摘要： An information storage medium with an array of laterally magnetised dots, as well as a process for producing this medium. Each dot (2) contains at least one magnetic domain formed by a thin layer (4) of at least a magnetic material laterally covering this flat material and deposited at oblique incidence relative to the normal (z) to the plane (6) of the array. The invention applies in particular to computer hard drives.
摘要翻译： 具有横向磁化点阵列的信息存储介质，以及用于生产该介质的方法。 每个点（2）包含至少一个由至少一个磁性材料的薄层（4）形成的磁畴，横向覆盖该平坦材料并相对于法线（z）以 数组。 本发明特别适用于计算机硬盘驱动器。
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公开(公告)号：US3741823A
公开(公告)日：1973-06-26
申请号：US3741823D
申请日：1970-10-26
申请人： GEN ELECTRIC
发明人： LOMMEL J
CPC分类号： B82Y25/00 , G11B13/045 , H01F10/002 , H01F10/325
摘要： THIN FILMS OF ION-RHODIUM EXHIBITING A BROADLY HYSTERIC FIRST ORDER TRANSISTION BETWEEN THE FERROMAGNETIC AND ANTIFERROMAGNETIC STATES ARE PRODUCED BY SEQUENTIALLY DEPOSITING IRON AND RHODIUM FILMS UPON A REFRACTORY SUBSTRATE AT A PRESSURE IN THE RANGE OF 1X10**-6 TORR, ANNEALING THE STRUCTURE IN A VACUUM OF 1X10**-6 TORR AT A TEMPERATURE OF APPROXIMATELY 700* C. FOR 1 HOUR TO PRODUCE A COMPLETE DIFFUSION OF THE IRON AND RHODIUM LAYERS, AND SUBSEQUENTLY SUBJECTING THE DIFFUSED LAYERS TO A SECOND ANNEAL IN AN ATMOSPHERE GREATER THAN 10 PARTS PER MILLION OXYGEN IN A THERMAL CYCLE THAT INCLUDES SLOWLY HEATING THE STRUCTURE TO 400* C., MAINTAINING THE 400* C. FOR APPROXIMATELY 10 MINUTES AND SLOWLY COOLING TO ROOM TEMPERATURE. FILMS THUS FORMED ARE ADVANTAGEOUSLY EMPOLYED IN THE RECORDING OF DIGITAL INFORMATION BY ELECTRON BEAM HEATING INDIVIDUAL REGIONS THROUGH A FIRST ORDER TRANSISTION TO THE FERROMAGNETIC STATE WHEREUPON THE REGIONS ARE PERMITTED TO COOL TO A BIASING TEMPERATURE SLIGHTLY HIGHER THAN THE TEMPERATURE OF TRANSISTION BACK TO AN ANTIFEROMAGNETIC STATE. A MAGNETIC FIELD THEN IS APPLIED TO THE ENTIRE FILM TO MAGNETIZE ONLY THOSE REGIONS OF THE FILM IN THE FERROMAGNETIC STATE AND READOUT OF THE RECORDED INFORMATION CAN BE ACHIEVED BY CONVENTIONAL ELECTRON BEAM MICROSCOPY. THE FERROMAGNETISM OF THE FILM SUBSEQUENTLY CAN BE ERASED BY COOLING THE FILM BELOW THE TRANSISTION TEMPERATURE TO THE ANTIFERROMAGNETIC STATE OR BY THE APPLICATION OF A STRAIN TO THE FILM.
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公开(公告)号：US09437269B2
公开(公告)日：2016-09-06
申请号：US15076992
申请日：2016-03-22
申请人： GLOBALFOUNDRIES INC.
CPC分类号： G11C11/161 , B82Y10/00 , B82Y25/00 , G11B5/64 , G11B5/66 , G11B9/1472 , G11B9/149 , G11C11/1673 , G11C11/1675 , H01F1/0009 , H01F10/002 , H01F10/3254 , H01L27/222 , H01L43/02 , H01L43/08 , Y10S977/838 , Y10S977/935 , Y10S977/943
摘要： An antiferromagnetic nanostructure according to one embodiment includes an array of at least two antiferromagnetically coupled magnetic atoms having at least two magnetic states that are stable for at least one picosecond even in the absence of interaction with an external structure, the array having a net magnetic moment of zero or about zero, wherein the array has 100 atoms or less along a longest dimension thereof. An atomic-scale structure according to one embodiment has a net magnetic moment of zero or about zero; two or more stable magnetic states; and having an array of atoms that has magnetic moments that alternate between adjacent magnetic atoms along one or more directions. Such structures may be used to store data at ultra-high densities.
摘要翻译： 根据一个实施方案的反铁磁性纳米结构包括具有至少两个具有至少两个磁状态的阵列，所述至少两个磁状态即使在与外部结构不相互作用的情况下，对于至少一皮秒是稳定的，该阵列具有净磁矩 为零或约零，其中该阵列沿其最长尺寸具有100个原子或更小。 根据一个实施例的原子尺度结构具有零或约零的净磁矩; 两个或多个稳定的磁状态; 并且具有具有沿着一个或多个方向在相邻磁性原子之间交替的磁矩的原子阵列。 这种结构可用于以超高密度存储数据。
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公开(公告)号：US09343130B2
公开(公告)日：2016-05-17
申请号：US14196835
申请日：2014-03-04
IPC分类号： G11C11/00 , G11C11/16 , G11B5/64 , G11B5/66 , H01F10/00 , B82Y10/00 , H01L43/02 , H01F1/00 , B82Y25/00 , H01F10/32
CPC分类号： G11C11/161 , B82Y10/00 , B82Y25/00 , G11B5/64 , G11B5/66 , G11B9/1472 , G11B9/149 , G11C11/1673 , G11C11/1675 , H01F1/0009 , H01F10/002 , H01F10/3254 , H01L27/222 , H01L43/02 , H01L43/08 , Y10S977/838 , Y10S977/935 , Y10S977/943
摘要： An atomic-scale structure according to one embodiment has a net magnetic moment of zero or about zero, two or more stable magnetic states, and an array of atoms that has magnetic moments that alternate between adjacent magnetic atoms along one or more directions. Such structures may be used to store data at ultra-high densities. An antiferromagnetic nanostructure according to another embodiment includes multiple arrays each corresponding to a bit. Each array has at least eight antiferromagnetically coupled magnetic atoms. Each array has at least two readable magnetic states that are stable for at least one picosecond. Each array has a net magnetic moment of zero or about zero. No external stabilizing structure exerts influence over the arrays for stabilizing the arrays. Each array has 100 atoms or less along a longest dimension thereof.
摘要翻译： 根据一个实施例的原子尺度结构具有零或约零，两个或更多个稳定磁状态的净磁矩，以及具有沿一个或多个方向在相邻磁性原子之间交替的磁矩的原子阵列。 这种结构可用于以超高密度存储数据。 根据另一实施例的反铁磁性纳米结构包括各自对应于一个位的多个阵列。 每个阵列具有至少八个反铁磁耦合的磁性原子。 每个阵列具有至少两个对于至少一个皮秒是稳定的可读磁状态。 每个阵列的净磁矩为零或约零。 没有外部稳定结构对阵列施加影响以稳定阵列。 每个阵列沿着其最长尺寸具有100个原子或更少的原子。
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公开(公告)号：US20140231888A1
公开(公告)日：2014-08-21
申请号：US14182521
申请日：2014-02-18
CPC分类号： H01L29/78 , B82Y10/00 , G11C11/161 , G11C11/5607 , H01F10/002 , H01F10/3268 , H01L29/1606 , H01L29/517 , H01L29/66984
摘要： The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS2, WS2, MoSe2, WSe2 and mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.
摘要翻译： 本发明涉及一种包括氧化铬的栅极膜和可以是石墨烯，InP，GaAs，GaSb，PbS，MoS2，WS2，MoSe2，WSe2的导电沟道材料的薄膜及其混合物的磁电自旋FET。 氧化铬或其他磁电和导电通道材料沿其间的界面紧密接触。 所得到的磁电设备可以是电压控制的并且提供非易失性存储器。
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公开(公告)号：US20140185371A1
公开(公告)日：2014-07-03
申请号：US14196835
申请日：2014-03-04
CPC分类号： G11C11/161 , B82Y10/00 , B82Y25/00 , G11B5/64 , G11B5/66 , G11B9/1472 , G11B9/149 , G11C11/1673 , G11C11/1675 , H01F1/0009 , H01F10/002 , H01F10/3254 , H01L27/222 , H01L43/02 , H01L43/08 , Y10S977/838 , Y10S977/935 , Y10S977/943
摘要： An atomic-scale structure according to one embodiment has a net magnetic moment of zero or about zero, two or more stable magnetic states, and an array of atoms that has magnetic moments that alternate between adjacent magnetic atoms along one or more directions. Such structures may be used to store data at ultra-high densities. An antiferromagnetic nanostructure according to another embodiment includes multiple arrays each corresponding to a bit. Each array has at least eight antiferromagnetically coupled magnetic atoms. Each array has at least two readable magnetic states that are stable for at least one picosecond. Each array has a net magnetic moment of zero or about zero. No external stabilizing structure exerts influence over the arrays for stabilizing the arrays. Each array has 100 atoms or less along a longest dimension thereof.
摘要翻译： 根据一个实施例的原子尺度结构具有零或约零，两个或更多个稳定磁状态的净磁矩，以及具有沿一个或多个方向在相邻磁性原子之间交替的磁矩的原子阵列。 这种结构可用于以超高密度存储数据。 根据另一实施例的反铁磁性纳米结构包括各自对应于一个位的多个阵列。 每个阵列具有至少八个反铁磁耦合的磁性原子。 每个阵列具有至少两个对于至少一个皮秒是稳定的可读磁状态。 每个阵列的净磁矩为零或约零。 没有外部稳定结构对阵列施加影响以稳定阵列。 每个阵列沿着其最长尺寸具有100个原子或更少的原子。
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公开(公告)号：US20130070518A1
公开(公告)日：2013-03-21
申请号：US13234073
申请日：2011-09-15
CPC分类号： G11C11/161 , B82Y10/00 , B82Y25/00 , G11B5/64 , G11B5/66 , G11B9/1472 , G11B9/149 , G11C11/1673 , G11C11/1675 , H01F1/0009 , H01F10/002 , H01F10/3254 , H01L27/222 , H01L43/02 , H01L43/08 , Y10S977/838 , Y10S977/935 , Y10S977/943
摘要： An antiferromagnetic nanostructure according to one embodiment includes an array of at least two antiferromagnetically coupled magnetic atoms having at least two magnetic states that are stable for at least one picosecond even in the absence of interaction with an external structure, the array having a net magnetic moment of zero or about zero, wherein the array has 100 atoms or less along a longest dimension thereof. An atomic-scale structure according to one embodiment has a net magnetic moment of zero or about zero; two or more stable magnetic states; and having an array of atoms that has magnetic moments that alternate between adjacent magnetic atoms along one or more directions. Such structures may be used to store data at ultra-high densities.
摘要翻译： 根据一个实施方案的反铁磁性纳米结构包括具有至少两个具有至少两个磁状态的阵列，所述至少两个磁状态即使在与外部结构不相互作用的情况下，对于至少一皮秒是稳定的，该阵列具有净磁矩 为零或约零，其中该阵列沿其最长尺寸具有100个原子或更小。 根据一个实施例的原子尺度结构具有零或约零的净磁矩; 两个或多个稳定的磁状态; 并且具有具有沿着一个或多个方向在相邻磁性原子之间交替的磁矩的原子阵列。 这种结构可用于以超高密度存储数据。
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公开(公告)号：US5976715A
公开(公告)日：1999-11-02
申请号：US965682
申请日：1997-11-06
申请人： Li-Han Chen , Sungho Jin , Wei Zhu , Robert Bruce van Dover
发明人： Li-Han Chen , Sungho Jin , Wei Zhu , Robert Bruce van Dover
IPC分类号： C22C38/00 , C22C38/26 , C22C38/28 , G11B5/127 , G11B5/187 , G11B5/31 , G11B5/39 , G11B5/667 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/14 , H01F10/32 , H01F17/00 , H01F41/30 , G11B5/66
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/1878 , G11B5/3109 , G11B5/3903 , G11B5/3906 , H01F10/002 , H01F10/08 , H01F10/13 , H01F10/138 , H01F10/147 , H01F10/3204 , H01F10/3254 , H01F17/0033 , H01F41/302 , Y10S428/90 , Y10T428/115
摘要： The invention is embodied in a soft magnetic thin film article comprising an iron--chromium-nitrogen (Fe--Cr--N) based alloy and methods for making such article. The soft magnetic thin film article is formed using an iron--chromium--nitrogen based alloy with tantalum in one embodiment and with at least one of the elements titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), molybdenum (Mo), niobium (Nb) or tungsten (W) in another embodiment. The article is formed such that the alloy has a relatively high saturation magnetization (e.g., greater than approximately 15 kG) and a relatively low coercivity (e.g., less than approximately 2.0 oersteds) in an as-deposited condition or, alternatively, with a very low temperature treatment (e.g., below approximately 150.degree. C.). The inventive films are suitable for use in electromagnetic devices, for example, in microtransformer cores, inductor cores and in magnetic read-write heads.
摘要翻译： 本发明体现在包含铁 - 铬 - 氮（Fe-Cr-N）基合金的软磁薄膜制品和制造这种制品的方法中。 在一个实施方案中，使用具有钽的铁 - 铬 - 氮基合金与所述软磁性薄膜制品形成钛（Ti），锆（Zr），铪（Hf），钒（V）， 钼（Mo），铌（Nb）或钨（W）。 制品形成为使得合金在沉积条件下具有相对高的饱和磁化强度（例如，大于约15kG）和相对较低的矫顽力（例如，小于约2.0奥斯特），或者替代地， 低温处理（如低于约150℃）。 本发明的膜适用于电磁装置，例如在微型变压器芯，电感芯和磁读写头中。
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