公开(公告)号：US3573753A

公开(公告)日：1971-04-06

申请号：US3573753D

申请日：1968-08-01

Applicant: GEN ELECTRIC

Inventor： SKELLY DAVID W ,  KOPCZEWSKI ROBERT F ,  BURGESS JAMES F ,  NEWBERRY STERLING P

IPC: G11C13/04 ,  G11C11/34

CPC classification number: G11C13/048

Abstract: A storage medium is described wherein coded information is destructively written by selectively inducing breakdown in a threshold biased capacitor having an electron sensitive variable conductivity layer positioned therein. In one specific embodiment, a hexachlorobutadiene dielectric layer and a juxtaposed lead oxide semiconductive layer are sandwiched between a tin oxide electrode and an electron transparent aluminum electrode. After threshold biasing the structure in a direction opposing conductivity in the lead oxide layer, a 10 kv. electron beam is selectively penetrated into the layer of lead oxide to induce conductivity therein thereby shifting the biasing voltage division in the storage medium to effect a localized dielectric breakdown in the hexachlorobutadiene. The dielectric breakdown in the hexachlorobutadiene selectively ruptures both the dielectric layer and the aluminum electrode thereover producing 10- 50 mil diameter apertures at points of electron beam irradiation. Information is readout by reverse biasing the storage medium and selectively scanning the medium with an electron beam. In a preferred embodiment, a semiconductive wafer is substituted for the tin oxide electrode to permit readout of the recorded information unimpeded by capacitive coupling between the electrodes.