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    Information storage and retrieval employing an electron beam
    4.
    发明授权
    Information storage and retrieval employing an electron beam 失效
    使用电子束的信息存储和检索

    公开(公告)号：US3573753A

    公开(公告)日：1971-04-06

    申请号：US3573753D

    申请日：1968-08-01

    Applicant: GEN ELECTRIC

    Inventor： SKELLY DAVID W ,  KOPCZEWSKI ROBERT F ,  BURGESS JAMES F ,  NEWBERRY STERLING P

    IPC: G11C13/04 ,  G11C11/34

    CPC classification number: G11C13/048

    Abstract: A storage medium is described wherein coded information is destructively written by selectively inducing breakdown in a threshold biased capacitor having an electron sensitive variable conductivity layer positioned therein. In one specific embodiment, a hexachlorobutadiene dielectric layer and a juxtaposed lead oxide semiconductive layer are sandwiched between a tin oxide electrode and an electron transparent aluminum electrode. After threshold biasing the structure in a direction opposing conductivity in the lead oxide layer, a 10 kv. electron beam is selectively penetrated into the layer of lead oxide to induce conductivity therein thereby shifting the biasing voltage division in the storage medium to effect a localized dielectric breakdown in the hexachlorobutadiene. The dielectric breakdown in the hexachlorobutadiene selectively ruptures both the dielectric layer and the aluminum electrode thereover producing 10- 50 mil diameter apertures at points of electron beam irradiation. Information is readout by reverse biasing the storage medium and selectively scanning the medium with an electron beam. In a preferred embodiment, a semiconductive wafer is substituted for the tin oxide electrode to permit readout of the recorded information unimpeded by capacitive coupling between the electrodes.

    Cascaded electron optical system
    8.
    发明授权
    Cascaded electron optical system 失效
    电子光学系统

    公开(公告)号：US3639803A

    公开(公告)日：1972-02-01

    申请号：US3639803D

    申请日：1970-02-16

    Applicant: GEN ELECTRIC

    Inventor： NEWBERRY STERLING P

    IPC: C08B31/08 ,  G11C11/23 ,  G11C13/04 ,  H01J29/80 ,  H01J31/58 ,  H01J29/41

    CPC classification number: C08B31/08 ,  G11C11/23 ,  G11C13/04 ,  H01J29/806 ,  H01J31/58

    Abstract: Precise control of an electron beam impinging on a large area receiving surface is achieved by employing, between the electron source and the receiving surface, a first matrix of electron deflection apparatus and by employing, intermediate the receiving surface and the first matrix, but close to the receiving surface, a second matrix of electron deflection apparatus of sufficient size to cover substantially all of the receiving surface. A predetermined one of the first matrix of lenses serves to direct the electron beam onto a predetermined one of the second matrix of lenses which provides fine control of the beam as it is swept over the underlying portion of the receiving surface.

    Abstract translation: 通过在电子源和接收表面之间采用电子偏转装置的第一矩阵并且通过在接收表面和第一矩阵之间使用但接近于第一矩阵，实现了对大面积接收表面照射的电子束的精确控制 接收表面，具有足够尺寸以覆盖基本上所有接收表面的电子偏转装置的第二矩阵。 第一透镜矩阵中的预定的一个用于将电子束引导到第二透镜阵列中的预定的一个上，这在提供对扫描在接收表面的下面部分上的光束进行精细控制。

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