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公开(公告)号：US3679299A
公开(公告)日：1972-07-25
申请号：US3679299D
申请日：1968-12-20
Applicant: GEN ELECTRIC
Inventor： BURGESS JAMES F , KOPCZEWSKI ROBERT F , HOLEMAN JOHN M
CPC classification number: H04N5/82 , G03B21/001
Abstract: The optical projection of information stored in a relief image such as a pattern of surface deformation of a light reflecting medium is accomplished by a projector which images on a screen the foci of either of the two sets of mirrors produced by the curved surfaces of the deformations. The hollows or concave mirrors provided by the bottoms of the deformations have their foci in front of the recording and when imaged on a screen by the projection optics provide a bright line image on a light background. The convex mirrors at the edges of the deformations have their foci (virtual) located to the rear of the recording and when imaged on the screen by the projection optics provide a dark outline of the deformations on a light background. In the embodiment illustrated, the projector is a reader and is provided with a back projection screen at the same end of the reader as the recording to be projected and the projection path includes suitable mirrors for reversing the direction of the projected light.
Abstract translation: 存储在诸如光反射介质的表面变形图案的浮雕图像中的信息的光学投影通过投影仪来实现，该投影仪在屏幕上成像由变形的曲面产生的两组反射镜中的任一个的焦点 。 由变形的底部提供的中空或凹面镜具有它们的焦点在记录的前面，并且当通过投影光学器件在屏幕上成像时，在浅色背景上提供亮线图像。 在变形边缘处的凸镜具有位于记录背面的焦点（虚拟），并且当通过投影光学器件在屏幕上成像时，在浅色背景上提供变形的暗轮廓。 在所示的实施例中，投影仪是读取器，并且在读取器的与要投影的记录相同的端部设置有背投影屏幕，并且投影路径包括用于反转投影光的方向的合适的反射镜。
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2.发明授权
公开(公告)号：US3614829A
公开(公告)日：1971-10-26
申请号：US3614829D
申请日：1969-12-08
Applicant: GEN ELECTRIC
Inventor： BURGESS JAMES F , NEUGEBAUER CONSTANTINE A , JOYNSON REUBEN E
IPC: H01L27/088 , H01L21/00 , H01L21/8234 , H01L21/8238 , H01L23/29 , H01L29/00 , H01L29/78 , B01J17/00 , H01G13/00
CPC classification number: H01L23/291 , H01L21/00 , H01L21/8238 , H01L29/00 , H01L2924/0002 , Y10S148/043 , Y10S148/053 , Y10S148/103 , Y10S148/105 , Y10S148/151 , H01L2924/00
Abstract: HIGH STABLITY, SELF-REGISTERED FIELD EFFECT TRANSISTORS ARE FORMED BY ETCHING THE METAL GATE ELECTRODE SIMULTANEOUSLY WITH EXPOSURE OF SURFACE ADJACENT AREAS OF A SEMICONDUCTIVE WAFER, GROWING AN ACTIVATOR CONTAINING GLASS ATOP ONLY THE EXPOSED AREAS OF THE WAFER BY PASSING A GASEOUS STREAM CONTAINING A MILD OXIDIZING AGENT AND AN ACTIVATOR IMPURITY ACROSS THE ETCHED FACE OF THE WAFER HEATED TO A TEMPERATURE BETWEEN 700*C. AND 1000*C., AND SUBSEQUENTLY BAKING THE SEMICONDUCTIVE WAFER IN A REDUCING ATMOSPHERE AT TEMPERATURES IN EXCESS OF 1000*C. TO FORM THE SOURCE AND DRAIN REGIONS OF THE SEMICONDUCTIVE WAFER. IN A PARTICULARLY PREFERRED EMBODIMENT, A GASEOUS STREAM CONTAINING 5-10% HYDROGEN AND 90-95% HELIUM OR ARGON IS BUBBLED THROUGH WATER AND ETHYL BORATE SOLUTIONS AT ROOM TEMPERATURE WHEREUPON THE STREAM IS PASSED OVER AN ETCHED WAFER TO FORM A SILICO-BORATE GLASS ATOP THE EXPOSED SILICON SURFACE. THE SEMICONDUCTIV WAFER THEN IS BAKED FOR APPROXIMATELY 4 HOURS AT 1000*C. IN A NITROGEN ATMOSPHERE CONTAINING 5-10% BY VOLUME HYDROGEN TO DRIVE THE ACTIVATOR IMPURITIES INTO THE WAFER. A TECHNIQUE FOR FORMING COMPLEMENTARY PAIRS OF HIGH STABILITY SELF-REGISTERED FIELD EFFECT TRANSISTORS ON A SINGLE SUBSTRATE ALSO IS DISCLOSED.
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3.发明授权Method for the preparation of copper sulfide films and products obtained thereby 失效制备硫化铜膜的方法及由此获得的产品
公开(公告)号：US3189481A
公开(公告)日：1965-06-15
申请号：US13470161
申请日：1961-08-29
Applicant: GEN ELECTRIC
Inventor： JOSEPH GAYNOR , BURGESS JAMES F , WAGNER BERNARD C
CPC classification number: C23C14/0629 , C23C14/58 , C23C14/5846 , G03G5/104 , H01B1/00 , Y10T428/24975 , Y10T428/31681
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公开(公告)号：US3691537A
公开(公告)日：1972-09-12
申请号：US3691537D
申请日：1971-05-26
Applicant: GEN ELECTRIC
Inventor： BURGESS JAMES F , NEUGEBAUER CONSTANTINE A
IPC: G11C11/403 , G11C11/405 , G11C11/406 , G11C11/412 , G11C11/24 , G11C11/40
CPC classification number: G11C11/403 , G11C11/405 , G11C11/406 , G11C11/412
Abstract: Voltage losses, and consequent reduced transconductance, can be overcome in metal-oxide-semiconductor (MOS) circuits by the use of a voltage variable coupling capacitor comprising a drain and a gate electrode. Since the capacitor is voltage variable, selective coupling is obtainable. In a dynamic memory cell, a voltage variable capacitor connected to the storage node selectively couples enabling to the storage node to increase the transconductance of the read transistor. Selective coupling is also used in apparatus ancillary to the memory cell to enhance the ''''refresh'''' operation. A flip-flop type of memory is also disclosed in which an enhanced output signal is obtained by selective coupling.
Abstract translation: 通过使用包括漏极和栅电极的电压可变耦合电容器，可以在金属氧化物半导体（MOS）电路中克服电压损耗和随之而来的降低的跨导。 由于电容器是电压可变的，所以可以进行选择耦合。 在动态存储单元中，连接到存储节点的电压可变电容器选择性地将使能到存储节点耦合以增加读取晶体管的跨导。 选择性耦合也用于辅助存储器单元的设备中，以增强“刷新”操作。 还公开了一种触发器类型的存储器，其中通过选择性耦合获得增强的输出信号。
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公开(公告)号：US3551227A
公开(公告)日：1970-12-29
申请号：US3551227D
申请日：1968-03-04
Applicant: GEN ELECTRIC
Inventor： BURGESS JAMES F
CPC classification number: H01F10/00
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Patent Agency Ranking6.发明授权Method of etching a metal layer coated with a layer containing a photolytic halogen liberator and a bleachable organic dye 失效蚀刻含有光催化剂卤化剂和可漂白有机染料的层的金属层的方法
公开(公告)号：US3485630A
公开(公告)日：1969-12-23
申请号：US3485630D
申请日：1966-01-21
Applicant: GEN ELECTRIC
Inventor： BURGESS JAMES F , SEWELL GORDON J
CPC classification number: G03C7/02 , G03F7/0041 , G03F7/0952
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公开(公告)号：US3573753A
公开(公告)日：1971-04-06
申请号：US3573753D
申请日：1968-08-01
Applicant: GEN ELECTRIC
Inventor： SKELLY DAVID W , KOPCZEWSKI ROBERT F , BURGESS JAMES F , NEWBERRY STERLING P
CPC classification number: G11C13/048
Abstract: A storage medium is described wherein coded information is destructively written by selectively inducing breakdown in a threshold biased capacitor having an electron sensitive variable conductivity layer positioned therein. In one specific embodiment, a hexachlorobutadiene dielectric layer and a juxtaposed lead oxide semiconductive layer are sandwiched between a tin oxide electrode and an electron transparent aluminum electrode. After threshold biasing the structure in a direction opposing conductivity in the lead oxide layer, a 10 kv. electron beam is selectively penetrated into the layer of lead oxide to induce conductivity therein thereby shifting the biasing voltage division in the storage medium to effect a localized dielectric breakdown in the hexachlorobutadiene. The dielectric breakdown in the hexachlorobutadiene selectively ruptures both the dielectric layer and the aluminum electrode thereover producing 10- 50 mil diameter apertures at points of electron beam irradiation. Information is readout by reverse biasing the storage medium and selectively scanning the medium with an electron beam. In a preferred embodiment, a semiconductive wafer is substituted for the tin oxide electrode to permit readout of the recorded information unimpeded by capacitive coupling between the electrodes.
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公开(公告)号：US3516346A
公开(公告)日：1970-06-23
申请号：US3516346D
申请日：1966-12-27
Applicant: GEN ELECTRIC
Inventor： SCHAEFER DONALD L , BURGESS JAMES F
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公开(公告)号：US3482976A
公开(公告)日：1969-12-09
申请号：US3482976D
申请日：1966-12-27
Applicant: GEN ELECTRIC
Inventor： SCHAEFER DONALD L , BURGESS JAMES F
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公开(公告)号：US3911553A
公开(公告)日：1975-10-14
申请号：US44789074
申请日：1974-03-04
Applicant: GEN ELECTRIC
Inventor： BURGESS JAMES F , NEUGEBAUER CONSTANTINE A
CPC classification number: C04B37/026 , C04B2235/6584 , C04B2237/124 , C04B2237/126 , C04B2237/343 , C04B2237/407 , C04B2237/54 , C04B2237/706 , C04B2237/86 , Y10S228/903
Abstract: An improved method of bonding metal to a ceramic is described in which the metal is shaped, surface treated, and curved prior to heating the metal to form a eutectic bond between the metal and the ceramic. The surface treatment comprises heating the metal in a reactive atmosphere, e.g., in an oxidizing atmosphere to produce an oxide layer. The surface treatment is carried out at a temperature lower than the metal-metal oxide eutectic temperature.
Abstract translation: 描述了将金属与陶瓷结合的改进方法，其中金属在加热金属之前成型，表面处理和弯曲，以在金属和陶瓷之间形成共晶键。 表面处理包括在反应性气氛中，例如在氧化气氛中加热金属，以产生氧化物层。 表面处理在低于金属 - 金属氧化物共晶温度的温度下进行。
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