公开(公告)号：US09540497B2

公开(公告)日：2017-01-10

申请号：US14589021

申请日：2015-01-05

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Don Mark Lipkin ,  Nicholas Edward Antolino ,  David Poerschke ,  Kevin Paul McEvoy

IPC: C08K3/34 ,  B29C73/02 ,  C09D183/04 ,  C08K3/36 ,  C08K3/22

CPC classification number: C08K3/34 ,  B29C73/02 ,  B29K2083/00 ,  C08K3/36 ,  C08K2003/221 ,  C08K2003/2213 ,  C09D183/04 ,  C08K3/0083 ,  C08K3/105

Abstract: There is set forth herein a silicon-based patch formulation comprising about 25 to 66 percent by volume of a solvent; about 4 to 10 percent by volume of a silicon-comprising binding material; and about 30 to 65 percent by volume of a patching material, the patching material comprising particles having one or more non-actinide Group IIIA elements, wherein a molar ratio of the one or more non-actinide Group IIIA elements to silicon within the patch formulation is about 0.95 to 1.25.

Abstract translation: 本文提出了含有约25至66％（体积）溶剂的硅基贴片制剂; 约4至10体积％的含硅粘合材料; 和约30至65体积％的修补材料，所述修补材料包含具有一种或多种非锕系IIIA族元素的颗粒，其中所述一种或多种非锕系IIIA族元素与所述贴剂配方中的硅的摩尔比 为约0.95至1.25。