SYSTEMS AND METHODS FOR CONTROL OF POWER SEMICONDUCTOR DEVICES
    1.
    发明申请
    SYSTEMS AND METHODS FOR CONTROL OF POWER SEMICONDUCTOR DEVICES 有权
    用于控制功率半导体器件的系统和方法

    公开(公告)号:US20140184308A1

    公开(公告)日:2014-07-03

    申请号:US13767641

    申请日:2013-02-14

    CPC classification number: H03K17/56 H03K17/08128

    Abstract: A device includes a controller configured to regulate one or more voltages applied to a gate of an insulated gate bipolar transistor (IGBT). The controller is configured to receive one or more voltage values associated with the IGBT, and generate a gating signal and transmit the gating signal to the IGBT. The gating signal is configured to activate or deactivate the IGBT. The controller is configured to generate a voltage clamping signal and transmit the voltage clamping signal to activate or deactivate an active switching device. The active switching device is configured to periodically limit the one or more voltage values associated with the IGBT based at least in part on one or more characteristics of the voltage clamping signal.

    Abstract translation: 一种器件包括被配置为调节施加到绝缘栅双极晶体管(IGBT)的栅极的一个或多个电压的控制器。 控制器被配置为接收与IGBT相关联的一个或多个电压值,并产生选通信号并将选通信号发送到IGBT。 门控信号被配置为激活或禁用IGBT。 控制器被配置为产生电压钳位信号并传送电压钳位信号以激活或去激活有源开关器件。 有源开关装置被配置为至少部分地基于电压钳位信号的一个或多个特性周期性地限制与IGBT相关联的一个或多个电压值。

    Systems and methods for control of power semiconductor devices
    2.
    发明授权
    Systems and methods for control of power semiconductor devices 有权
    用于控制功率半导体器件的系统和方法

    公开(公告)号:US08907716B2

    公开(公告)日:2014-12-09

    申请号:US13767641

    申请日:2013-02-14

    CPC classification number: H03K17/56 H03K17/08128

    Abstract: A device includes a controller configured to regulate one or more voltages applied to a gate of an insulated gate bipolar transistor (IGBT). The controller is configured to receive one or more voltage values associated with the IGBT, and generate a gating signal and transmit the gating signal to the IGBT. The gating signal is configured to activate or deactivate the IGBT. The controller is configured to generate a voltage clamping signal and transmit the voltage clamping signal to activate or deactivate an active switching device. The active switching device is configured to periodically limit the one or more voltage values associated with the IGBT based at least in part on one or more characteristics of the voltage clamping signal.

    Abstract translation: 一种器件包括被配置为调节施加到绝缘栅双极晶体管(IGBT)的栅极的一个或多个电压的控制器。 控制器被配置为接收与IGBT相关联的一个或多个电压值,并产生选通信号并将选通信号发送到IGBT。 门控信号被配置为激活或禁用IGBT。 控制器被配置为产生电压钳位信号并传送电压钳位信号以激活或去激活有源开关器件。 有源开关装置被配置为至少部分地基于电压钳位信号的一个或多个特性周期性地限制与IGBT相关联的一个或多个电压值。

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