公开(公告)号：US20180108654A1

公开(公告)日：2018-04-19

申请号：US15293461

申请日：2016-10-14

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Viorel C. ONTALUS ,  Arvind KUMAR ,  Xin WANG ,  Gan WANG

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/08 ,  H01L21/8234

CPC classification number: H01L21/823418 ,  H01L29/0847 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785

Abstract: A method of forming a FinFET device includes ion implanting a diffusion-inhibiting species such as carbon into source and drain regions of a semiconductor fin prior to a dopant activating anneal. The implanted carbon, which can be incorporated into the fin in conjunction with a replacement metal gate process after defining a sacrificial gate but prior to forming sidewall spacers on the gate, forms a barrier that impedes dopant diffusion across the barrier, which enables abrupt junctions and higher overall dopant concentrations within the semiconductor fin.