METHODS FOR OPTICAL PROXIMITY CORRECTION IN THE DESIGN AND FABRICATION OF INTEGRATED CIRCUITS
    1.
    发明申请
    METHODS FOR OPTICAL PROXIMITY CORRECTION IN THE DESIGN AND FABRICATION OF INTEGRATED CIRCUITS 有权
    集成电路设计与制造中的光临近度校正方法

    公开(公告)号:US20140220786A1

    公开(公告)日:2014-08-07

    申请号:US13757286

    申请日:2013-02-01

    Abstract: A method of manufacturing an optical lithography mask includes providing a patterned layout design comprising a plurality of polygons, correcting the patterned layout design using optical proximity correction (OPC) by adjusting widths and lengths of one or more of the plurality of polygons, to generate a corrected patterned layout design, converting the corrected patterned layout design into a mask writer-compatible format, to generate a mask writer-compatible layout design comprising the plurality of polygons, and biasing each polygon in the plurality of polygons with a bias that accounts for large-scale density values of the patterned layout design, to generate a biased, mask writer-compatible layout design.

    Abstract translation: 制造光学光刻掩模的方法包括提供包括多个多边形的图案化布局设计,通过调整多个多边形中的一个或多个的多边形的宽度和长度来使用光学邻近校正(OPC)校正图案化布局设计,以产生 校正的图案布局设计,将校正的图案布局设计转换成掩模写入器兼容格式,以生成包括多个多边形的掩模写入器兼容的布局设计,并且利用大的多边形偏置多边形中的每个多边形 - 图案布局设计的尺度密度值,以产生偏置的掩模写入器兼容布局设计。

    Methods for optical proximity correction in the design and fabrication of integrated circuits
    2.
    发明授权
    Methods for optical proximity correction in the design and fabrication of integrated circuits 有权
    集成电路设计和制造中的光学邻近校正方法

    公开(公告)号:US08975195B2

    公开(公告)日:2015-03-10

    申请号:US13757286

    申请日:2013-02-01

    Abstract: A method of manufacturing an optical lithography mask includes providing a patterned layout design comprising a plurality of polygons, correcting the patterned layout design using optical proximity correction (OPC) by adjusting widths and lengths of one or more of the plurality of polygons, to generate a corrected patterned layout design, converting the corrected patterned layout design into a mask writer-compatible format, to generate a mask writer-compatible layout design comprising the plurality of polygons, and biasing each polygon in the plurality of polygons with a bias that accounts for large-scale density values of the patterned layout design, to generate a biased, mask writer-compatible layout design.

    Abstract translation: 制造光学光刻掩模的方法包括提供包括多个多边形的图案化布局设计,通过调整多个多边形中的一个或多个的多边形的宽度和长度来使用光学邻近校正(OPC)校正图案化布局设计,以产生 校正的图案布局设计,将校正的图案布局设计转换成掩模写入器兼容格式,以生成包括多个多边形的掩模写入器兼容的布局设计,并且利用大的多边形偏置多边形中的每个多边形 - 图案布局设计的尺度密度值,以产生偏置的掩模写入器兼容布局设计。

Patent Agency Ranking