公开(公告)号：US09219062B2

公开(公告)日：2015-12-22

申请号：US13902459

申请日：2013-05-24

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Peter Zeitzoff ,  Abhijeet Paul

IPC: H01L21/70 ,  H01L27/088 ,  H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/823418 ,  H01L21/823431 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In accordance with an exemplary embodiment, an integrated circuit includes a semiconductor substrate with a fin structure overlying the semiconductor substrate and having a source region, a drain region, and a channel region between the source region and drain region. The source region and the drain region each have a recessed surface. A source contact is adjacent the recessed surface in the source region and a drain contact is adjacent the recessed surface in the drain region. Linear current paths are defined from the channel region to the source contact and from the channel region to the drain contact.

Abstract translation: 提供了用于制造集成电路的集成电路和方法。 根据示例性实施例，集成电路包括半导体衬底，其半导体衬底具有覆盖在半导体衬底上的鳍状结构，并具有源极区域，漏极区域和源极区域与漏极区域之间的沟道区域。 源极区域和漏极区域各自具有凹入表面。 源极接触件邻近源极区域中的凹陷表面，并且漏极接触邻近漏极区域中的凹陷表面。 线路电流路径从通道区域到源极触点以及从沟道区域到漏极接触点定义。

公开(公告)号：US20140346605A1

公开(公告)日：2014-11-27

申请号：US13902459

申请日：2013-05-24

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Peter Zeitzoff ,  Abhijeet Paul

IPC: H01L27/088 ,  H01L29/66

CPC classification number: H01L27/0886 ,  H01L21/823418 ,  H01L21/823431 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In accordance with an exemplary embodiment, an integrated circuit includes a semiconductor substrate with a fin structure overlying the semiconductor substrate and having a source region, a drain region, and a channel region between the source region and drain region. The source region and the drain region each have a recessed surface. A source contact is adjacent the recessed surface in the source region and a drain contact is adjacent the recessed surface in the drain region. Linear current paths are defined from the channel region to the source contact and from the channel region to the drain contact.

Abstract translation: 提供了用于制造集成电路的集成电路和方法。 根据示例性实施例，集成电路包括半导体衬底，其半导体衬底具有覆盖在半导体衬底上的鳍状结构，并具有源极区域，漏极区域和源极区域与漏极区域之间的沟道区域。 源极区域和漏极区域各自具有凹入表面。 源极接触件邻近源极区域中的凹陷表面，并且漏极接触邻近漏极区域中的凹陷表面。 线路电流路径从通道区域到源极触点以及从沟道区域到漏极接触点定义。