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1.发明申请公开(公告)号：US20190304528A1
公开(公告)日：2019-10-03
申请号：US15944032
申请日：2018-04-03
Applicant: GLOBALFOUNDRIES INC.
Inventor： Akhilesh R. JAISWAL , Ajey Poovannummoottil JACOB
Abstract: The present disclosure relates to a structure including a memory array circuit with a magnetic tunnel junction array and an inverter between at least two data magnetic tunnel junctions and configured to enable logic-in-memory computations.
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