公开(公告)号：US20190088764A1

公开(公告)日：2019-03-21

申请号：US15705888

申请日：2017-09-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ruilong XIE ,  Steven BENTLEY ,  Puneet Harischandra SUVARNA ,  Chanro PARK ,  Min Gyu SUNG ,  Lars LIEBMANN ,  Su Chen FAN ,  Brent ANDERSON

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06

Abstract: A vertical FinFET includes a semiconductor fin formed over a semiconductor substrate. A self-aligned first source/drain contact is electrically separated from a second source/drain contact by a spacer layer that is formed over an endwall of the fin. The spacer layer, which comprises a dielectric material, allows the self-aligned first source/drain contact to be located in close proximity to an endwall of the fin and the associated second source/drain contact without risk of an electrical short between the adjacent contacts.