公开(公告)号：US20200219763A1

公开(公告)日：2020-07-09

申请号：US16244071

申请日：2019-01-09

Applicant: GLOBALFOUNDRIES INC.

Inventor： YUPING REN ,  HAIGOU HUANG ,  RAVI PRAKASH SRIVASTAVA ,  ZHIGUO SUN ,  QIANG FANG ,  CHENG XU ,  GUOXIANG NING

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/311

Abstract: A method of fabricating interconnects in a semiconductor device is provided, which includes forming an interconnect layer having a conductive line and depositing a first aluminum-containing layer over the interconnect layer. A dielectric layer is deposited over the first aluminum-containing layer, followed by a second aluminum-containing layer deposited over the dielectric layer. A via opening is formed in the second aluminum-containing layer through to the conductive line, wherein the via opening has chamferless sidewalls.