公开(公告)号：US20200219763A1

公开(公告)日：2020-07-09

申请号：US16244071

申请日：2019-01-09

Applicant: GLOBALFOUNDRIES INC.

Inventor： YUPING REN ,  HAIGOU HUANG ,  RAVI PRAKASH SRIVASTAVA ,  ZHIGUO SUN ,  QIANG FANG ,  CHENG XU ,  GUOXIANG NING

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/311

Abstract: A method of fabricating interconnects in a semiconductor device is provided, which includes forming an interconnect layer having a conductive line and depositing a first aluminum-containing layer over the interconnect layer. A dielectric layer is deposited over the first aluminum-containing layer, followed by a second aluminum-containing layer deposited over the dielectric layer. A via opening is formed in the second aluminum-containing layer through to the conductive line, wherein the via opening has chamferless sidewalls.

公开(公告)号：US20200066586A1

公开(公告)日：2020-02-27

申请号：US16111193

申请日：2018-08-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： SEAN X LIN ,  RUILONG XIE ,  GUOXIANG NING ,  LEI SUN

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/58 ,  H01L23/522

Abstract: A method of fabricating interconnects in a semiconductor device is provided, which includes forming a metallization layer and depositing a hardmask layer over the metallization layer. A dielectric layer is deposited over the hardmask layer and an opening is formed in the dielectric layer to expose the hardmask layer. The exposed hardmask layer in the opening is etched to form an undercut beneath the dielectric layer. A metal shoulder is formed at the undercut, wherein the metal shoulder defines an aperture dimension used for forming a via opening extending to the metallization layer.