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公开(公告)号：US10755918B2
公开(公告)日：2020-08-25
申请号：US16193313
申请日：2018-11-16
Applicant: GLOBALFOUNDRIES INC.
Inventor： Man Gu , Tao Han , Charlotte D. Adams
IPC: H01L29/66 , H01L21/02 , H01L21/311
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a spacer with laminate liner and methods of manufacture. The structure includes: a replacement metal gate structure; a laminate low-k liner on the replacement metal gate structure; and a spacer on the laminate low-k liner.
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