公开(公告)号：US20200052106A1

公开(公告)日：2020-02-13

申请号：US16101162

申请日：2018-08-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Laertis Economikos ,  Hui Zang ,  Ruilong Xie ,  Neal Makela ,  Pei Liu ,  Jiehui Shu ,  Chih-chiang Chang

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/49 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/28

Abstract: At least one method, apparatus, and system providing semiconductor devices comprising a first gate having a first width and comprising a first work function metal (WFM); a first liner disposed over the first WFM; a first gate metal having a first height; and a first pinch-off spacer over the first WFM, the first liner, and the first gate metal to above the first height; and a second gate having a second width greater than the first width, and comprising a second WFM; a second liner disposed over the second WFM; a second gate metal having substantially the first height; and a first conformal spacer over the second WFM and the second liner.