公开(公告)号：US09413169B2

公开(公告)日：2016-08-09

申请号：US14243295

申请日：2014-04-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： James P. Di Sarro ,  Robert J. Gauthier, Jr. ,  Tom C. Lee ,  Junjun Li ,  Souvick Mitra ,  Christopher S. Putnam

IPC: H02H9/04

CPC classification number: H02H9/046 ,  H02H9/042

Abstract: Circuits and methods for providing electrostatic discharge protection. The protection circuit may include a power clamp device, a timing circuit including a resistor and a capacitor that is coupled with the resistor at a node, a transmission gate configured to selectively connect the node of the timing circuit with the power clamp device, and a control circuit coupled with the node. The control circuit is configured to control the transmission gate based upon whether or not the capacitor is defective. The timing circuit may be deactivated if the capacitor in the timing circuit is defective and the associated chip is powered. Alternatively, the timing circuit may be activated if the capacitor in the timing circuit is not defective.

Abstract translation: 提供静电放电保护的电路和方法。 保护电路可以包括功率钳位装置，包括电阻器的定时电路和与节点处的电阻器耦合的电容器，被配置为选择性地将定时电路的节点与电源钳位装置连接的传输门，以及 控制电路与节点耦合。 控制电路被配置为基于电容器是否有缺陷来控制传输门。 如果定时电路中的电容器有故障并且相关的芯片被供电，则定时电路可以被去激活。 或者，如果定时电路中的电容器没有故障，则定时电路可以被激活。

公开(公告)号：US09536870B2

公开(公告)日：2017-01-03

申请号：US14977737

申请日：2015-12-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： James P. Di Sarro ,  Robert J. Gauthier, Jr. ,  Tom C. Lee ,  Junjun Li ,  Souvick Mitra ,  Christopher S. Putnam

IPC: H01L27/02 ,  H01L29/74 ,  H01L29/06 ,  G06F17/50 ,  H01L29/861 ,  H01L29/66

CPC classification number: H01L27/0262 ,  G06F17/5063 ,  G06F17/5072 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66121 ,  H01L29/66393 ,  H01L29/7408 ,  H01L29/7412 ,  H01L29/742 ,  H01L29/7436 ,  H01L29/861

Abstract: An electrostatic discharge protection circuit is disclosed. A method of manufacturing a semiconductor structure includes forming a semiconductor controlled rectifier including a first plurality of fingers between an n-well body contact and an anode in an n-well, and a second plurality of fingers between a p-well body contact and a cathode in a p-well.

Abstract translation: 公开了一种静电放电保护电路。 一种制造半导体结构的方法包括在n阱中形成包括n阱体接触和阳极之间的第一多个指状物的半导体可控整流器，以及p阱体接触件和 阴极在p阱中。