公开(公告)号：US20200211610A1

公开(公告)日：2020-07-02

申请号：US16234954

申请日：2018-12-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yentsai Huang ,  Chunsung Chiang ,  Wuyang Hao ,  Jack T. Wong ,  Lejan Pu

IPC: G11C11/16

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to a single path memory sense amplifier circuit and methods of manufacture. The circuit includes a sense amplifier circuit comprising a plurality of self-aligned transistors in a single sensing path; and a memory array connected to the sense amplifier circuit by the single sensing path.

公开(公告)号：US10706905B1

公开(公告)日：2020-07-07

申请号：US16234954

申请日：2018-12-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yentsai Huang ,  Chunsung Chiang ,  Wuyang Hao ,  Jack T. Wong ,  Lejan Pu

IPC: G11C11/00 ,  G11C11/16

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to a single path memory sense amplifier circuit and methods of manufacture. The circuit includes a sense amplifier circuit comprising a plurality of self-aligned transistors in a single sensing path; and a memory array connected to the sense amplifier circuit by the single sensing path.