公开(公告)号：US10706905B1

公开(公告)日：2020-07-07

申请号：US16234954

申请日：2018-12-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yentsai Huang ,  Chunsung Chiang ,  Wuyang Hao ,  Jack T. Wong ,  Lejan Pu

IPC: G11C11/00 ,  G11C11/16

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to a single path memory sense amplifier circuit and methods of manufacture. The circuit includes a sense amplifier circuit comprising a plurality of self-aligned transistors in a single sensing path; and a memory array connected to the sense amplifier circuit by the single sensing path.

公开(公告)号：US10482933B2

公开(公告)日：2019-11-19

申请号：US15951426

申请日：2018-04-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Wuyang Hao

IPC: G11C7/00 ,  G11C7/12 ,  G11C8/10 ,  G11C7/18

Abstract: The present disclosure relates to a structure including a column multiplexor circuit with a plurality of bit line groups to perform a read operation of data using half of a plurality of column selection signals in the column multiplexor circuit, and each of the bit line groups comprises a reference bit line column, a plurality of transistors, and a plurality of bit lines.

公开(公告)号：US20200211610A1

公开(公告)日：2020-07-02

申请号：US16234954

申请日：2018-12-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yentsai Huang ,  Chunsung Chiang ,  Wuyang Hao ,  Jack T. Wong ,  Lejan Pu

IPC: G11C11/16

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to a single path memory sense amplifier circuit and methods of manufacture. The circuit includes a sense amplifier circuit comprising a plurality of self-aligned transistors in a single sensing path; and a memory array connected to the sense amplifier circuit by the single sensing path.