公开(公告)号：US20190131452A1

公开(公告)日：2019-05-02

申请号：US15797380

申请日：2017-10-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ashish Kumar JHA ,  Hong YU ,  Xinyuan DOU ,  Xusheng WU ,  Dongil CHOI ,  Edmund K. BANGHART ,  Md Khaled HASSAN

IPC: H01L29/78 ,  H01L29/06 ,  H01L27/092 ,  H01L21/762 ,  H01L21/8238

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to selective shallow trench isolation (STI) fill material for stress engineering in semiconductor structures and methods of manufacture. The structure includes a single diffusion break (SDB) region having at least one shallow trench isolation (STI) region with a stress fill material within a recess of the at least one STI region. The stress fill material imparts a stress on a gate structure adjacent to the at least one STI region.