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公开(公告)号：US20200312775A1
公开(公告)日：2020-10-01
申请号：US16368836
申请日：2019-03-28
Applicant: GLOBALFOUNDRIES INC.
Inventor： RINUS TEK PO LEE , FUAD AL-AMOODY , ASLI SIRMAN , JOSEPH KYALO KASSIM , HUI ZANG , BHARAT V. KRISHNAN
IPC: H01L23/532 , H01L23/522 , H01L21/768
Abstract: A semiconductor device structure is provided that includes a dielectric layer and a barrier layer having at least two layers of two dimensional materials on the dielectric layer, wherein each layer is made of a different two dimensional material.
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