公开(公告)号：US20200312775A1

公开(公告)日：2020-10-01

申请号：US16368836

申请日：2019-03-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： RINUS TEK PO LEE ,  FUAD AL-AMOODY ,  ASLI SIRMAN ,  JOSEPH KYALO KASSIM ,  HUI ZANG ,  BHARAT V. KRISHNAN

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

Abstract: A semiconductor device structure is provided that includes a dielectric layer and a barrier layer having at least two layers of two dimensional materials on the dielectric layer, wherein each layer is made of a different two dimensional material.

公开(公告)号：US20200343142A1

公开(公告)日：2020-10-29

申请号：US16396775

申请日：2019-04-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： JIEHUI SHU ,  RINUS TEK PO LEE ,  WEI HONG ,  HUI ZANG ,  HONG YU

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/423 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/285

Abstract: The present disclosure generally relates to semiconductor device fabrication and integrated circuits. More particularly, the present disclosure relates to replacement metal gate processes and structures for transistor devices having a short channel and a long channel component. The present disclosure also relates to processes and structures for multi-gates with dissimilar threshold voltages. The present disclosure further provides a method of forming structures in a semiconductor device by forming a first and second cavities having sidewalls and bottom surfaces in a dielectric structure, where the first cavity has a narrower opening than the second cavity, forming a first material layer in the first and second cavities, forming a protective layer over the first material layer, where the protective layer fills the first cavity and conformally covers the sidewall and the bottom surfaces of the second cavity, performing a first isotropic etch on the protective layer to selectively remove a portion of the protective layer and form a retained portion of the protective layer, performing a second isotropic etch on the first material layer to selectively remove a portion of the first material layer and form a retained portion of the first material layer, removing the retained portion of the protective layer, and forming a second material layer in the first and second cavities, the second material layer being formed on the retained portion of the first material layer.